2026

• 420. Changhwan Choi, "How to modulate threshold voltage(Vth) using ALD HKMG Gate Stack for advanced logic transistor and DRAM peripheral transistor", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 419. Jisu Park, Dohyun Lee, Sangmyun Lim, GyuMin Hwang, Hoon Pyo, YunSeo Lim, Seongho Lee and Changhwan Choi, "Impact of Zr Doping on Trap Level Energy and Memory Window in HfO©ü-Based Charge Trapping Layers for 3D NAND Flash", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 418. Donguk Kim, Hyunjin Yim, Yehbeen Im, Youngseo Na, Kangbaek Seo, Seungchae Lee, Kanghyeok Lee, Sangtae Park and Changhwan Choi, "Ultra-thin Molybdenum Nitride (MoN) using a Plasma-Enhanced ALD as a Next-Generation Copper Diffusion Barrier for Scaled Interconnects", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 417. Donguk Kim, Hyunjin Yim, Yehbeen Im, Youngseo Na, Kangbaek Seo, Seungchae Lee, Kanghyeok Lee, Sangtae Park and Changhwan Choi, "Plasma Atomic Layer Etching of Molybdenum for Low-Damage and Precisely Controllable Etch Process", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 416. Jae Won Chung, Sangkuk Han, Wonjae Choi, Haesoo Jang, Kyungwook Park, Sangmyun Lim, Soyoung Park, Sangwoo Jeong, and Changhwan Choi, "Achieving Higher-k and Enhanced Reliability near the Morphotropic Phase Boundary in Hf1xZriO2 by Interfacial Nitride Metal Layer for DRAM Cell Capacitor", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 415. Seungmin Kang, Jisu Park, Woosung Son, and Changhwan Choi, "Enhancement of Data Retention and Thermal Stability in Si-Doped Ge2Sb2Te5 Phase Change Memory", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 414. Jisu Park, Seungmin Kang, Wooseong Son, and changhwan choi, "Carbon-Doped GST PCRAM: Correlating Chemical Bonding with Thermal Stability and Retention", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 413. Seungchae Lee, Hyunjin Lim, Yehbeen Im Youngseo Na, Kangbaek Seo, Donguk Kim, Sangtae Park, Kanghyeok Lee and Changhwan Choi, "Effect of H2/N2 Ratio on the Electrical and Structural Properties of Cobalt Films Prepared by plasma-Enhanced Atomic Layer Deposition", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 412. Sunbum Kim, Dugkyu Han, Kyoungyeon Min, Sehyeon Choi, Jaeho Lee, Kangbaek Seo, Taehun Kim, Seohyeon Cho, and Changhwan Choi, "Adhesion Enhancement of Glass-Metal Interface using Metal Oxides for TGV Packaging Applications", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 411. Sunbum Kim, Kyoungyeon Min, Dugkyu Han, Sehyeon Choi, Jaeho Lee, Kangbaek Seo, Ahra Jo, Juno Kim, Moonkeun Kim, Euisun Choi, and Changhwan Choi*, "Plasma Activated SiO2 and SiCN Dielectrics and Bonding Characteristics", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 410. Hyeoncheol Jeong, Kyungsoo Park, Yoonseok Lee, Yeonwoo Choi, Sangmyun Lim, Jihoon Choi, Taesuk Kim, and Changhwan Choi, "Ultra-thin La2O, Interfacial Layer for TDDB Lifetime Extension In HZO Ferroelectric Devices", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 409. Jinyeong Lee, Kyungsoo Park, Hyeoncheol Jeong, Sangmyun Lim, Taesuk Kim, Gyumin Hwang, Yeonwoo Choi, Jihoon Choi, Yoonseok Lee, Yejun Park, Hanbyul Kim, Yongjoo Park and Changhwan Choi*, "Dual-Gate HZO Ferroelectric Field-Effect Transistor with Gd-Doped HfO©ü Top-Gate Insulator", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 408. Sangmyun Lim, Kyungsoo Park, Sangkuk Han, HyeonCheol Jeong, Jihoon Choi, Haesoo Jang, Jaewon Chung, Wonjae Choi and Changhwan Choi*, "Charge Pumping-Based Characterization of Interface Trap Density and Reliability of FeFETs for Cryogenic Operation", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 407. SangTae Park ,HyunJin Lim , YehBeen Im , Young Seo Na , SeungChae Lee , KangBaek Seo, DongUk Kim, KangHyeok Lee and Changhwan Choi*, "Atomic-Scale Smoothing of Cobalt Thin Films via a Plasma-Enhanced Quasi-ALD/ALE Supercycle", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 406. Taesuk Kim, Kyungsoo Park, Hyeoncheol Jeong, Yeonwoo Choi, Sangmyun Lim, Jihoon Choi, Jinyeong Lee and Changhwan Choi*, "Oxygen Reservoir Layer-Enabled Performance Enhancement in HZO Ferroelectrics: Dependence on Temperature and Electrode Oxygen Ratio", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 405. Yoonseok Lee, Kyung-Soo Park, Sang-Myun Lim, Ji-Hoon Choi, Yeon-Woo Choi, Jin-Yeong Lee, Hyeon-Cheol Jeong, Young-Seo Na, Chulwon Chung, Tae-Suk Kim and Changhwan Choi*, "Strain and Scavenging Effects of Metal Electrodes on Ferroelectric Properties of HfₓZr©û₋ₓO©ü Thin Films", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 404. Jihoon Choi, Kyungsoo Park, Hyeoncheol Jeong, Sangmyun Lim, Taesuk Kim, Gyumin Hwang, Yeonwoo Choi, Jinyeong Lee, Yejun Park and Changhwan Choi*, "Enhanced Thermal Robustness of HfxZr1-xO2 through Lanthanum Oxygen Diffusion Interlayer", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 403. Sehyeon Choi, Sunbum Kim, Kyoungyeon Min, Dugkyu Han, Jaeho Lee, Kangbaek Seo, Wooseong Son, Taehun Kim, Seohyeon Cho, and Changhwan Choi*, "Process Optimization of Cu/SiO2 Hybrid Bonding by Controlling Via Size and CMP Dishing Under Fixed Edge Geometry", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 402. Dug Kyu Han, Sun Bum Kim, Kyoung Yeon Min, Kang Baek Seo, Jae Ho Lee, Sae Hyun Choi and Changhwan Choi*, "Effects of Cu Surface Roughness and Signal Characteristics in PSPI-Based Redistribution Layer", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 401. Jaeho Lee, Sunbum Kim, Kyoungyeon Min, Dugkyu Han, Sehyeon Choi, Kangbaek Seo, Wooseong Son, Taehun Kim, Seohyeon Cho, and Changhwan Choi*, "Enhanced Low-Temperature Cu-Cu Bonding via Sequential N2 /Ar Plasma-Treated Cobalt Passivation Layer for Vertical 3D Interconnects", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 400. Kangbaek Seo, Hyunjin Lim, Seungchae Lee, Youngseo Na, Yehbeen Im, Donguk Kim, Soyeon Lee, Hyunseok Oh, Donghun Shin, Yongjoo Park, and Changhwan Choi*, "Low-Resistivity Thin Vanadium Nitride (VN) Films Using Plasma-Enhanced Atomic Layer Deposition for Advanced Cu Diffusion Barrier", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 399. Sangkuk Han, Wonjae Choi, Jae Won Chung, Haesoo Jang, Kyungwook Park, Sangmyun Lim, Soyoung Park, Sangwoo Jeong, Hanbyul Kim, Youngjoo Park, and Changhwan Choi*, "Comparative Analysis of Rare-Earth Element (La, Y, Gd) Oxides Based Dipole-First Gate Stack for Multi-Vt Design Integration Targeting Low Thermal Budget CFET Device", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 398. Kyungsoo Park, Minhyuk Kim, Duho Kim, Jihoon Choi, Yeonwoo Choi, Jin Yeong Lee, Taesuk Kim, Hyeoncheol Jeong, and Changhwan Choi*, "BEOL-Compatible FeTFTs with Ultra-Thin 3 nm HZO / 3 nm Oxide Semiconductor Stack (Physical) Enabling Low-Voltage Operation for Next-Generation Non-Volatile Memory", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 397. Yeonwoo Choi, Kyungsoo Park, Jin Yeong Lee, Taesuk Kim, Sang Myun Lim, Jihoon Choi, Hyeoncheol Jeong and Changhwan Choi*, "Vertical Ferroelectric Tunnel Junctions with Composition-Tuned Oxide Semiconductors for Enhanced TER and Self-Rectifying Behavior", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 396. Gyumin Hwang, Yunseo Lim, Dohyun Lee, Seongho Lee, Jisu Park, Sangmyun Lim, Jinyeong Lee, Hoon Pyo, Hansol Oh, Yongjoo Park, and Changhwan Choi, "Correlation Between Rare-Earth-Induced Trap Depth and Memory Retention characteristics in ZrO2-Based Charge-Trapping Layers (CTL) NAND Flash Application", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 395. Dohyun Lee, Yunseo Lim, Jisu Park, Gyumin Hwang, Sangmyun Lim, Seongho Lee, JinYeong Lee, Hoon Pyo and Changhwan Choi*, "Impact of Crystallization on Trap Levels and Charge Storage Characteristics of High-k HfO©ü Charge Trap Layers for 3D NAND Flash Memory Device", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 394. Yunseo Lim, Kyungsoo Park, Hyeoncheol Jeong and Changhwan Choi*, "Enhanced Memory Characteristics of MIFIS Gate Stack Using Doped HfO2 Gate Interlayer", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 393. Yunseo Lim, Dohyun Lee, Jisu Park, Sangmyun Lim, Seongho Lee, Hansol Lee, Hyungjun Kim, Jaehyun Yang, Youngseon Son, Bio Kim, Hanmei Choi and Changhwan Choi*, "Enhanced Memory Performance of Flash Memory Using Doped ALD HfO2 Based Charge Trap Layer", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 392. Soyoung Park, Sangkuk Han, Wonjae Choi, Kyungwook Park, Jaewon Chung, Haesoo Jang, Sangmyun Lim, Sangwoo Jeong, and Changhwan Choi*, "Enhancement of Electrical Characteristics of ALD-HfO©ü Thin Films using a Modulated Split Feeding Approach (SFA) with TEMA-Hf and O©ý", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 391. Youngseo Na, Sangkuk Han, Soyoung Park, and Changhwan Choi*, "Interfacial Oxygen Engineering for Rutile TiO2 Growth Using Composition-Controlled RuOx Electrodes", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 390. Youngseo Na, Hyunjin Lim, Seungchae Lee, Yehbeen Im, Donguk Kim, Kangbaek Seo, and Changhwan Choi*, "Investigation of Area-Selective Ru Deposition via Substrate-dependent ALD-Etch Supercycles", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 389. ¹Î°æ¿¬, ±è¼±¹ü, ÇÑ´ö±Ô, ÃÖ¼¼Çö, ÀÌÀçÈ£, ¼­°­¹é, ÃÖâȯ*, "Low-Temperature, Low-Pressure Polymer Hybrid Bonding via PSPI Plasma Activation: Toward Low-Void Interfaces", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 388. ¹Î°æ¿¬, ±è¼±¹ü, ÀÌÁø¿µ, ÃÖ¿¬¿ì, ÃÖâȯ*, "Ultra-Thin ALD-MoN Interlayer for Low-Resistance and Reliable Contacts to In-Based Oxide Channels", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 387. Yeh been Im, Youngseo Na, Hyunjin Lim, Jeonga Heo, Shinyeong Park, Soyeon Lee, Jiwon Chang, and Changhwan Choi*, "Reliability Evaluation of Cobalt Nitride(CoNx) Diffusion Barrier for Advanced Cu and Co interconnects", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 386. Yeh been Im, Young don Kim, Hyeon jun Cho, Chin wook Chung and Chang hwan Choi*, "Atomic Layer Etching of Cobalt Thin Films via Surface Fluorination and Low-Energy Ar⁺ Ion Activation", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 385. Wonjae Choi, Sangkuk Han, Haesoo Jang, Jaewon Chung, Sangmyun Lim, Kyungwook Park, Sangwoo Jeong, Soyoung Park, and Changhwan Choi*, "Hydrogen-Based Interface Passivation Enhanced Performance for pMOS Devices with High-k Gate Stack", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 384. Wonjae Choi, Sangkuk Han, Haesoo Jang, Jaewon Chung, Sangmyun Lim, Kyungwook Park, Sangwoo Jeong, Soyoung Park, and Changhwan Choi*, "Experimental Investigation of Al-based Doping for Thereshold Voltage Control in GAA pMOS Device", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 383. Hyunjin Lim, Seungchae Lee, Yehbeen Im, Youngseo Na, Donguk Kim, Kangbaek Seo, Kanghyeok Lee, Sangtae Park, Yong Joo Park, Dong Hun Shin and Changhwan Choi*, "Plasma Enhanced Atomic Layer Deposition of Molybdenum Carbide ( Amido MoC Imido Based Metal x ) Thin Films using an Organic Precursor for Conductive Interconnects", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 382. Kyungwook Park, Sangkuk Han, Wonjae Choi, Haesoo Jang, Jaewon Chung, Sangmyun Lim, Sangwoo Jeong, Soyoung Park and Changhwan Choi*, "Mitigating BTI Degradation in HKMG Transistors via Oxygen Reservoir Layer Engineering", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 381. Haesoo Jang , Sangkuk Han , Wonjae Choi, Jaewon Chung, Sangmyun Lim, Kyungwook Park, Sangwoo Jeong, Soyoung Park and Changhwan Choi, "Cobalt Nitride (CoN) as for Alternative P-type Work-Function Metal Gate", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 380. Wooseong Son, Sunbum Kim, Kyoungyeon Min, Dugkyu Han, Jaeho Lee, Sehyeon Choi, Kangbaek Seo, Taehun Kim, Seohyeon Cho and Changhwan Choi*, "High-k Dielectric-Based Low-Temperature Wafer-Level Bonding for Advanced 3D Integration", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01
• 379. Kangbaek Seo, Hyunjin Lim, and Changhwan Choi*, "Plasma-enhanced atomic layer deposition of ultrathin vanadium nitride (VN) Cu diffusion barriers with low resistivity under varying N©ü/H©ü ratios", NANO CONVERGENCE CONFERENCE(NCC) 2026, °ïÁö¾Ï¸®Á¶Æ®, 2026.02
• 378. Haesoo Jang , Sangkuk Han , Wonjae Choi, Jaewon Chung, Sangmyun Lim, Kyungwook Park, Sangwoo Jeong, Soyoung Park and Changhwan Choi*, "DC NBTI Analysis and Modeling of s-CFETs Enabled by Cobalt Nitride(CoN) p-Type Work-Function Metal Gate", NANO CONVERGENCE CONFERENCE(NCC) 2026, °ïÁö¾Ï¸®Á¶Æ®, 2026.02
• 377. Jaewon Chung, Sangkuk Han, Wonjae Choi, Haesoo Jang, kyungwook Park, Sangmyun Lim, Soyoung Park, Sangwoo Jeong, and Changhwan Choi*, "Interfacial Nitride Metal Engineering for Enhanced Dielectric Constant and Reliability of Hf1-xZrxO2 near the Morphotropic Phase Boundary in DRAM Capacitors", NANO CONVERGENCE CONFERENCE(NCC) 2026, °ïÁö¾Ï¸®Á¶Æ®, 2026.02
• 376. Jihoon Choi, Kyungsoo Park and Changhwan Choi*, "Enhanced Thermal Robustness of HfxZrx-1O2 through lanthanum Oxygen Diffusion Interlayer", NANO CONVERGENCE CONFERENCE(NCC) 2026, °ïÁö¾Ï¸®Á¶Æ®, 2026.02
• 375. Donguk Kim, Hyunjin Yim, Yehbeen Im, Youngseo Na, Kangbaek Seo, Seungchae Lee, Kanghyeok Lee, Sangtae Park and Changhwan Choi*, "Low-Damage Atomic Layer Etching of Molybdenum for Nanoscale Device Fabrication", NANO CONVERGENCE CONFERENCE(NCC) 2026, °ïÁö¾Ï¸®Á¶Æ®, 2026.02

2025

• 374. Hyeon Cheol Jeong, Kyungsoo Park, Yoon Seok Lee, Yeon Woo Choi, Sang Myung Lim, Ji Hoon Choi, Tae Suk Kim, and Changhwan Choi, "Ultra-thin La2O3 Interfacial Layer for TDDB Lifetime Extension in HZO Ferroelectric Devices", Korea International Semiconductor Conference on Manufacturing Technology (KISM), Paradise Hotel Busan, 2025.11
• 373. Yoonseok Lee, Kyung-Soo Park, Sang-Myun Lim, Ji-Hoon Choi, Yeon-Woo Choi, Jin-Yeong Lee, Hyeon-Cheol Jeong, Tae-Suk Kim, and Changhwan Choi, "Gate Metal Engineering for Tailoring Ferroelectric Properties of Hf(x)Zr(1-x)O2 Thin Films", Korea International Semiconductor Conference on Manufacturing Technology (KISM), Paradise Hotel Busan, 2025.11
• 372. Jisu Park, Wooseong Son, Seung Min Kang, and Changhwan Choi, "Improved Thermal Stability and Retention in Carbon-Doped Ge2Sb2Te5-based Phase-Change Random Access Memory", Korea International Semiconductor Conference on Manufacturing Technology (KISM), Paradise Hotel Busan, 2025.11
• 371. Changhwan Choi, "Multi-Threshold Voltage(Vth) Engineering Using ALD TaN-Based HKMG Gate Stack for Advanced Logic ang DRAM Devices [Invited]", Korea International Semiconductor Conference on Manufacturing Technology (KISM), Paradise Hotel Busan, 2025.11
• 370. Jaeho Lee and Changhwan Choi, "Deposition-Temperature-Dependent Structural and Mechanical Properties of Amorphous Carbon Hard Masks", Çѱ¹Àç·áÇÐȸ Ãß°èÇмú´ëȸ, ¼¼ÀÎÆ®Á¸½ºÈ£ÅÚ, °­¸ª, 2025.11
• 369. Seungchae Lee and Changhwan Choi, "PECVD °øÁ¤ ÇöóÁ ÆÄ¿ö Á¶Àý¿¡ µû¸¥ ºñÁ¤Áú ź¼ÒÃþ Çϵ帶½ºÅ© ¹Ú¸·ÀÇ ¹Ì¼¼±¸Á¶ ¹× ±â°èÀû ¹°¼º º¯È­", Çѱ¹Àç·áÇÐȸ Ãß°èÇмú´ëȸ, ¼¼ÀÎÆ®Á¸½ºÈ£ÅÚ, °­¸ª, 2025.11
• 368. Sehyeon Choi, Sunbum Kim, Kyoungyeon Min, Dugkyu Han, Jaeho Lee, Kangbaek Seo, and Changhwan Choi, "Characterization of PEALD SiNx films for Dielectric-Dielectric Interface Applications", he 23rd International Symposium on Microelectronics and Packaging (ISMP), Inter-Burgo, Daegu, 2025.11
• 367. Jaeho Lee, Sunbum Kim, Kyoungyeon Min, Dugkyu Han, Sehyeon Choi, Kangbaek Seo, and Changhwan Choi, "Suppressing Interfacial Oxidation and Orimoting Diffusion via Co Passivation for Defect-Reduced Cu-Cu Thermo-Compression (TC) Bonding", he 23rd International Symposium on Microelectronics and Packaging (ISMP), Inter-Burgo, Daegu, 2025.11
• 366. Sunbum Kim, Dugkyu Han, Kyoungyeon Min, Sehyeon Choi, Jaeho Lee, Kangbaek Seo, and Changhwan Choi, "Enhancement of Seed Layer Adhesion on Glass Substrates via ALD-Deposited High-k Thin Film", he 23rd International Symposium on Microelectronics and Packaging (ISMP), Inter-Burgo, Daegu, 2025.11
• 365. Kyoung-Yeon Min, Sun-Bum Kim, Dug-Kyu Han, Kang-Baek Seo, Jae-Ho Lee, Se-Hyeon Choi, and Changhwan Choi, "Hybrid Bonding at Low Temperature Enabled by Plasma-Activated Polymer Inorganic Dielectric Interfaces", he 23rd International Symposium on Microelectronics and Packaging (ISMP), Inter-Burgo, Daegu, 2025.11
• 364. Dug Kyu Han, Sun Bum Kim, Kyoung Yeon Min, Jae Ho Lee, Se Hyeon Choi, Kang Baek Seo, and Changhwan Choi, "Electrical and Reliability Characterization of PSPI-Based Redistribution Layers for Advanced Packaging", The 23rd International Symposium on Microelectronics and Packaging (ISMP), Inter-Burgo, Daegu, 2025.11
• 363. Wonjae Choi, Sangkuk Han, Wonyoung, Jang, Haesoo Jang, Jaewon Chung, Kyungwook Park, and Changhwan Choi, "Flat-Band Voltage Tuning through Al Layer Position Engineering in (Al2O3)X(HfO2)1-X Gate Structure Logic Device", 2025 International Conference on Solid State Devices and Materials (SSDM), Pacifico Yokohama, Yokohama, Japan, 2025.09
• 362. Youngseo Na, Hyunjin Lim, Seungchae Lee, Yehbeen Im, Donguk Kim, Kangbaek Seo and Changhwan Choi, "Phase Evolution and Substrate-Dependent Passivation Behavior of ALD-Ru Films under Oxidizing Conditions", 2025 International Conference on Solid State Devices and Materials (SSDM), Pacifico Yokohama, Yokohama, Japan, 2025.09
• 361. Yun Seo Im, San Park, Se Hyeon Choi, Bon Cheol Ku, Seong Ho Lee, Hyung Jun Kim, Jae Hyun Yang, Bio Kim, Young Seon Son, Han Mei Choi, and Changhwan Choi, "Enhanced Charge Trapping Characteristics in Flash Memory Using TiN Nanocrystal embedded SiNx Layers", 2025 International Conference on Solid State Devices and Materials (SSDM), Pacifico Yokohama, Yokohama, Japan, 2025.09
• 360. Sangkuk Han, Kyungsoo Park, Wonjae Choi, Wonyoung Jang, Haesoo Jang, Jaewon Chung Kyungwook Park and Changhwan Choi, "Fluorine-Compatible Dipole-First Gate Stack with Yttrium Oxides for Multi-Vth and Enhanced Device Performance", 2025 International Conference on Solid State Devices and Materials (SSDM), Pacifico Yokohama, Yokohama, Japan, 2025.09
• 359. Kyungsoo Park, Sangkuk Han, Chulwon Chung, Minhyuk Kim and Changhwan Choi, "Fluorine Surface Engineering for Vt Control and Memory Window Boost in HZO FeFET toward High-Performance Analog In-Memory Computing", 2025 International Conference on Solid State Devices and Materials (SSDM), Pacifico Yokohama, Yokohama, Japan, 2025.09
• 358. Kyungsoo Park, Minhyuk Kim, Chulwon Chung, Sunbum Kim, Sangkuk Han and Changhwan Choi, "Unveiling Ferroelectric Properties of Co-Injected ALD HfxZr1-xO2: A Study of Thickness, Composition, and Cryogenic Behavior (73 to 300 K)", 2025 International Conference on Solid State Devices and Materials (SSDM), Pacifico Yokohama, Yokohama, Japan, 2025.09
• 357. Sunbum Kim, Dugkyu Han, Kyungyeon Min, and Changhwan Choi, "Analysis on the Adhesion Failure between Cu Metal Layer and Photosensitive Polyimide (PSPI) for 2.nD Re-Distribution Layer (RDL) Process", 32nd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IEEE IPFA), Spice Convention Centre, Penang, Malalysia, 2025.08
• 356. Young Seo Na, Hyun Jin Lim, Sang Kuk Han, Hyo Jin Ahn, Yeh Been Im, Won Jae Choi and Changhwan Choi, "Atomic-Scale Processing of Ruthenium Thin Films via ALD and ALE for Advanced Interconnects", AVS 25th International Conference on Atomic Layer Deposition (ALD) & 12th International Atomic Layer Etching (ALE) Workshop, ICC JEJU, 2025.06
• 355. Sang Kuk Han, Kyung Soo Park, won Jae Choi, Won Young Jang, Hae Soo Jang, Jae Won Chung, and Changhwan Choi, "EWF Modulation and Electrical Performance Enhancement Using Fluorine Surface Treatment in Yttrium Oixde-based Dipole-First Gate Stack", AVS 25th International Conference on Atomic Layer Deposition (ALD) & 12th International Atomic Layer Etching (ALE) Workshop, ICC JEJU, 2025.06
• 354. Hyunjin Lim, Yehbeen Im, Youngseo Na, and Changhwan Choi, "Optimizing Grain Structure in Mo-Ru Alloys for High Conductivity", AVS 25th International Conference on Atomic Layer Deposition (ALD) & 12th International Atomic Layer Etching (ALE) Workshop, ICC JEJU, 2025.06
• 353. Hyunjin Lim, Seungchae Lee1, Youngseo Na, Yehbeen Im, Donguk Kim, Kangbaek Seo and Changhwan Choi, "Suppression of Size Effect in MoPd Thin Films for Nanoscale Interconnects", 28th IEEE International Interconnect Technology Conference (IITC), The Westin Chosun, Busan, 2025.06
• 352. Youngseo Na, Hyunjin Lim, Sangkuk Han, Hyojin Ahn, Yehbeen Im, Kang Baek Seo, Wonjae Choi, and Changhwan Choi, "Temperature-Dependent ALD and Quasi-ALE Behavior of Ruthenium Thin Films", 28th IEEE International Interconnect Technology Conference (IITC), The Westin Chosun, Busan, 2025.06
• 351. Yeh Been Im, Young Seo Na, Hyun Jin Lim, Dong Uk Kim, Kang Baek Seo, Seung Chae Lee, and Changhwan Choi, "Chemical and Elecrtrical Charaterization of ALD Cobalt Nitride (CoN) as an Alternative Barrier for Advanced Cu Interconnects", 28th IEEE International Interconnect Technology Conference (IITC), The Westin Chosun, Busan, 2025.06
• 350. WON JAE CHOI, SANG KUK HAN, HYUN JIN LIM, HYO JIN AHN, YEH BEEN IM, YOUNG SEO NA, and CHANG HWAN CHOI, "Al©üO©ý as a Dipole Shift Layer in Logic Devices for Enables Operational Evaluation through Large-Fine Vt Tuning in Multi - Vt Strategies", ´ëÇѱݼÓÀç·áÇÐȸ Ãá°èÇмú´ëȸ, Á¦ÁÖ±¹Á¦ÄÁº¥¼Ç¼¾ÅÍ(ICC JEJU), 2025.04
• 349. Yun Seo Lim, San Park, Se Hyeon Choi, Bon Cheol Ku, Seong Ho Lee, Han Mei Choi, Hyung Jun Kim, Jae Hyun Yang, Bio Kim, Young Seon Son, and Changhwan Choi, "Enhanced Memory Performance of Flash Memory Using TiN Metal-Dot embedded SiNx Charge Trap Layer", ´ëÇѱݼÓÀç·áÇÐȸ Ãá°èÇмú´ëȸ, Á¦ÁÖ±¹Á¦ÄÁº¥¼Ç¼¾ÅÍ(ICC JEJU), 2025.04
• 348. Yeh been Im, Young Seo Na, Hyun jin Lim, and Changhwan Choi, "Enhanced Conformality in ALD-based Cobalt Thin-Film in High-Aspect-Ratio Structures Using Plasma Pre-Treatment and Atomic Layer Etching", ´ëÇѱݼÓÀç·áÇÐȸ Ãá°èÇмú´ëȸ, Á¦ÁÖ±¹Á¦ÄÁº¥¼Ç¼¾ÅÍ(ICC JEJU), 2025.04
• 347. JiSu Park, San Park, and Changhwan Choi, "Effects of Post-Annealing in Ge2Sb2Te5 Thin Film-based Phase-Change Memory for the improvement of Reliability by Extreme High Unbalanced Magnetron Sputtering", ´ëÇѱݼÓÀç·áÇÐȸ Ãá°èÇмú´ëȸ, Á¦ÁÖ±¹Á¦ÄÁº¥¼Ç¼¾ÅÍ(ICC JEJU), 2025.04
• 346. Dugkyu Han, Sunbum Kim, Kyoungyeon Min, Sehyeon Choi, Jaeho Lee and Changhwan Choi, "Sunbum Kim, Dugkyu Han, Kyoungyeon Min, Sehyeon Choi, Jaeho Lee and Changhwan Choi", 2025³â Çѱ¹¸¶ÀÌÅ©·Î ÀüÀÚ ¹× ÆÐŰ¡ ÇÐȸ Ãá°èÇмú´ëȸ, Songdo Covensia, 2025.04
• 345. Sunbum Kim, Dugkyu Han, Kyoungyeon Min, Sehyeon Choi, Jaeho Lee and Changhwan Choi, "Layer Transfer Techniques for Monolithic 3D Integration Applied to CMOS Technology", 2025³â Çѱ¹¸¶ÀÌÅ©·Î ÀüÀÚ ¹× ÆÐŰ¡ ÇÐȸ Ãá°èÇмú´ëȸ, Songdo Covensia, 2025.04
• 344. Sang Kuk Han, Hyun Jin Lim, Ki Sub Kim, Hyo Jin Ahn, Yeh Been Im, Won Jae Choi, Young Seo Na and Changhwan Choi, "Multi-Vt Engineering for Logic Devices Using Rare Earth Oxide-Based Dipole-First Approach with Various Interfacial Layer Formation", 32ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2025.02
• 343. Dugkyu Han, Sunbum Kim, Gyulee Kim, Kyoungyeon Min, and Changhwan Choi, "Signal Characteristics of Coplanar Waveguide Structure Redistribution Layer on PSPI Substrate", 32ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2025.02
• 342. Yun Seo Lim, San Park, Se Hyeon Choi, Boncheol Ku, Seong Ho Lee, Hyungjun Kim, Jaehyun Yang, Bio Kim, Youngseon Son, Hanmei Choi, and Changhwan Choi, "Memory Characteristics of Flash Memory Using TiN Metal-Dot Embedded SiNx Charge Trap Layer", 32ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2025.02
• 341. Yeh Been Im, Young Seo Na, Hyun Jin Lim, and Changhwan Choi, "Enhanced Surface Inhibition Using Plasma Pre-Treatment For Area-Selective Metal Atomic Layer Deposition (AS-Metal ALD)", 32ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2025.02
• 340. Seongho Lee, San Park, Sehyeon Choi, Yun Seo Lim, Hyungjun Kim, Jaehyun Yang, Bio Kim, Youngseon Son, Hanmei Choi, and Changhwan Choi, "Improved Memory Characteristics of MONOS Device with High-k Dots Embedded Si3N4 Charge Trap Layer", 32ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2025.02
• 339. Jae-Eon Yeo, Kyungsoo Park, Seunghyeon Yoon, Junhyeok Park, Hyeoncheol Jung and Changhwan Choi, "Interfacial Oxygen Vacancy Control for High Reliability of Ferroelectric Based Devices", 32ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2025.02
• 338. Hyojin Ahn, Hyunjin Lim, Sangkuk Han, Yehbeen Im, Wonjae Choi, Youngseo Na, and Changhwan Choi*, "Enhancing Memory Characteristics of MIFIS-FeFET: Effects of Si3N4 Charge Injection Layer and Its Composition", 32ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2025.02
• 337. Kyungsoo Park, Chulwon Chung, Seung Hyun Yoon, Junhyeok Park and Changhwan Choi, "Vt Tuning Without Memory Window Reduction in HZO-based FeFET Using Fluorine Surface Treatment for High-Performance Analog In-Memory Computing", 32ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2025.02
• 336. Kyoungyeon Min, Sunbum Kim, Gyulee Kim, Dugkyu Han, Young Ju Han, Soonoh Jeong, Mooseong Kim and Changhwan Choi, "Development of a Dry Desmear Process for High-Performance Packaging and Analysis of Smear Removal Efficiency", 32ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2025.02
• 335. Young Seo Na, Hyun Jin Lim, Sang Kuk Han, Hyo Jin Ahn, Yeh Been Im, Won Jae Choi and Changhwan Choi, "Low-Resistivity Ruthenium Thin Films for Advanced Interconnects Using Plasma-Enhanced ALD", 32ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2025.02
• 334. Sunbum Kim, Gyulee Kim, Kyoungyeon Min, Dugkyu Han, and Changhwan Choi, "Plasma Treatment and Electrical Characterization for Enhanced RDL Adhesion on PSPI in Advanced Packaging", 32ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2025.02
• 333. Sunbum Kim, Gyulee Kim, Kyoungyeon Min, Dugkyu Han, Young Ju Han, Soonoh Jeong, Mooseong Kim and Changhwan Choi, "Dry Etching Technology for Sub-10 µm Vertical Via Formation in Build-Up Films for Advanced Semiconductor Packaging", 32ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2025.02
• 332. Chulwon Chung, Kyungsoo Park, Seunghyeon Yun, Junhyeok Park, and Changhwan Choi, "Control of Ferroelectric Properties According to the Type of Inserted Layer for Synaptic Device Application", NANO CONVERGENCE CONFERENCE(NCC) 2025, ´ëÀüÄÁº¥¼Ç¼¾ÅÍ, 2025.01
• 331. Kisub Kim, Hyunjin Lim, Sangkuk Han, Hyojin Ahn, Yebeen Im, Wonjae Choi, Youngseo Na and Changhwan Choi, "The Effects of Y2O3 Passivation on the Performance of Dual-Gate Ferroelectric Thin Film Transistor", NANO CONVERGENCE CONFERENCE(NCC) 2025, ´ëÀüÄÁº¥¼Ç¼¾ÅÍ, 2025.01
• 330. Young Seo Na, Hyun Jin Lim, Sang Kuk Han, Hyo Jin Ahn, Yeh Been Im, Won Jae Choi, and Changhwan Choi, "Surface Engineering for Area-Selective Atomic Layer Deposition of Ruthenium", NANO CONVERGENCE CONFERENCE(NCC) 2025, ´ëÀüÄÁº¥¼Ç¼¾ÅÍ, 2025.01

2024

• 329. Hyunjin Lim, Young Seo Na, Yeh Been Im and Changhwan Choi, "Area-Selective Atomic Layer Deposition (AS-ALD) of Ru using Octadecyltrichlorosilane (ODTS) as a Surface Modifier", International Symposium on Semiconductor Devices and Materials (ISSDM), Inha University, Incheon, KOREA, 2024.12
• 328. Wonjae Choi, Hyunjin Lim, Sangkuk Han, Kisub Kim, Hyojin Ahn, Yehbeen Im, Youngseo Na and Changhwan Choi, "Optimization of Annealing for Enhanced Electrical Properties by Controlling HK-Based Al2O3 Doping Thickness in Logic device", International Symposium on Semiconductor Devices and Materials (ISSDM), Inha University, Incheon, KOREA, 2024.12
• 327. Changhwan Choi, "Electrical, Material, and Mechanical Characterization of Redistribution Layer (RDL) for the Advanced Packaging Technology", International Symposium on Semiconductor Devices and Materials (ISSDM), Inha University, Incheon, KOREA, 2024.12
• 326. Seongho Lee, Changhwan Choi, Yunseo Lim, Sehyeon Choi, San Park, "A Flash Memory with High-k Dots Embedded Si3N4", The 8th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), Jeju Shinhwa World, 2024.11
• 325. Ki Sub Kim, Hyun Jin Lim, Hyo Jin Ahn, Sang Kuk Han, and Changhwan Choi, "Impact of Yttrium Passivation on IGZO Channel Ferroelectric TFT Performance", The 8th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), Jeju Shinhwa World, 2024.11
• 324. Sangkuk Han, Changhwan Choi, Hyun Jin Lim, Hyo Jin Ahn,and Kisub Kim, "Impact of Flat-Band Voltage Shift in Ultra-Thin La2O3 Film for Multi-Vt Solution", The 8th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), Jeju Shinhwa World, 2024.11
• 323. Joonho Moon, Hyeongjun Kim, Gayun Kim, Gawon Kim, Sooah Lee, Changhwan Choi, and Kiyoung Lee, "Quantitative Analysis of Electron Scattering in Metallic Ultra-Thin Films via Thermochemical and Crystallography Process Variations", The 8th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), Jeju Shinhwa World, 2024.11
• 322. Seunghyeon Yun, Changhwan Choi, Chulwon Chung, Kyungsoo Park, Junhyeok Park, Hyeoncheol Jeong, Jaeeon Yeo, "ZrO2 Synaptic MFMIS FeTFTs Employing Built-in Bias Formed by Asymmetric Metal Work-Function Engineering", Çѱ¹Àç·áÇÐȸ Ãß°èÇмú´ëȸ, ¿þ½ºÆ¾Á¶¼±È£ÅÚ, ºÎ»ê, 2024.11
• 321. Hyojin Ahn, Changhwan Choi, Hyunjin Lim, Sangkuk Han, Kisub Kim, Wonjae Choi, Youngseo Na, "Enhanced Memory Characteristics in MIFIS-FeFET using Si3N4 Charge Injection Layer", Çѱ¹Àç·áÇÐȸ Ãß°èÇмú´ëȸ, ¿þ½ºÆ¾Á¶¼±È£ÅÚ, ºÎ»ê, 2024.11
• 320. ÃÖâȯ, ¹ÚÁØÇõ, À±½ÂÇö, ¹Ú°æ¼ö, Á¤Ã¶¿ø, Á¤Çöö, ¿©Àç¾ð, "Effects of ALD Deposition Temperature and Grain Size Engineering with HZO Seed Layer on FeFET Performance", Çѱ¹Àç·áÇÐȸ Ãß°èÇмú´ëȸ, ¿þ½ºÆ¾Á¶¼±È£ÅÚ, ºÎ»ê, 2024.11
• 319. Sunbum Kim, Gyulee Kim, Dayoung Oh, Dugkyu Han, Kyoungyeon Min, Donghyun Uhm, Jaemyung Lim, and Changhwan Choi, "Utilizing PSPI in Re-Distribution Layer (RDL) Processes for Advanced Semiconductor Packaging", Korea International Semiconductor Conference on Manufacturing Technology (KISM), Paradise Hotel Busan, 2024.11
• 318. Sunbum Kim, Gyulee Kim, Dayoung Oh, Dugkyu Han, Kyoungyeon Min, and Changhwan Choi, "Electrical and Material Characterization of RDL on the PSPI Packaging Substrate", Korea International Semiconductor Conference on Manufacturing Technology (KISM), Paradise Hotel Busan, 2024.11
• 317. Sun Bum Kim, Gyu Lee Kim, Da Young Oh, Kyoung Yeon Min, Dug Kyu Han, and Changhwan Choi, "Improved Adhesion between PSPI and Metal Layer for RDL Process", International Symposium on Microelectronics and Packaging (ISMP) & International Conference Reliability and Sress-Related Phenomena in Nanoelectronics (IRSP), Paradise Hotel, Busan, 2024.11
• 316. Gyulee Kim, Sunbum Kim, Dayoung Oh, Young Ju Han, Soonoh Jeong, Mooseong Kim and Changhwan Choi, "Dry Desmear Process for Advanced Packaging Substrate", International Symposium on Microelectronics and Packaging (ISMP) & International Conference Reliability and Sress-Related Phenomena in Nanoelectronics (IRSP), Paradise Hotel, Busan, 2024.11
• 315. Sunbum Kim, Gyulee Kim, Dayoung Oh, Young Ju Han, Soonoh Jeong, Mooseong Kim and Changhwan Choi, "Dry Etching Process for Via Formation in Build-up Film Substrate", International Symposium on Microelectronics and Packaging (ISMP) & International Conference Reliability and Sress-Related Phenomena in Nanoelectronics (IRSP), Paradise Hotel, Busan, 2024.11
• 314. San Park, Wonhyeok. Choi, Junwoo Park, Pilseong Jung, Sanghyun Ji, and Changhwan Choi, "Improved reliability of extreme high unbalanced magnetron sputtered Ge2Sb2Te5 thin film-based phase change memory by controlling post annealing time", Non-Volatile Memory Technology Symposium (NVMTS), Paradise Hotel, Busan, 2024.10
• 313. Kyungsoo Park, Chulwon Chung, Boncheol Ku, Seunghyeon Yun, Junhyeok Park and Changhwan Choi, "Improved Memory Window and Endurance of FeFET using Laminated Thin Films and Fluorine Plasma Passivation for Analog Synaptic Characteristics", International Conference on Solid State Devices and Materials (SSDM), Arcrea HIMEJI Hyogo, Japan, 2024.09
• 312. Changhwan Choi, "Fabrication and Characterization of Re-distriubtion Layer (RDL) on the Semiconductor Package Substrates [Invited]", International SoC Design Conference (ISOCC), Sapporo, Japan, 2024.08
• 311. Kyungsoo Park, Chulwon Chung, Boncheol Ku, Seunghyun Yun, Junhyeok Park, and Changhwan Choi, "Improved Memory Window and Endurance-Robust HZO based FeFET for Analog Synapse", Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Gangneung, 2024.07
• 310. Junhyeok Park, Chulwon Chung, Boncheol Ku, Seunghyun Yun, Kyungsoo Park, and Changhwan Choi, "Effect of Grain Size Engineering by HZO Seed Layer on Ferroelectric Field Effect Transistor (FeFET)", Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Gangneung, 2024.07
• 309. Boncheol Ku, Jae-Min Sim, Jae Seok Hur, Jae Kyeong Jeong, Yun-Heub Song, and Changhwan Choi, "3D Gate-All-Around (GAA) ALD HZO/IGO-based FeFET with Back-Gate Structure", Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Gangneung, 2024.07
• 308. HyoJin Ahn, HyunJin Lim, SangKuk Han, HyeongJun Kim, Jiheyon Sim, Kisub Kim, YoonJi Kim, and Changhwan Choi, "Enhanced Memory Window in MIFIS-FeFET using Si3N4 Charge Injection Layer", Nano Korea, KINTEX, ÀÏ»ê, 2024.07
• 307. ÃÖâȯ, "Æ®·£Áö½ºÅÍ ¼ÒÀÚÀÇ ¹®ÅÎ Àü¾Ð Á¦¾î¸¦ À§ÇÑ ALD ±Ý¼Ó Àü±Ø ¹× Dipole Çü¼º [ÃÊû¹ßÇ¥]", Çѱ¹¹ÝµµÃ¼µð½ºÇ÷¹À̱â¼úÇÐȸ Ãá°èÇмú´ëȸ, ±¸¹ÌÄÚ (Gumico), ±¸¹Ì, 2024.05
• 306. À±½ÂÇö, Á¤Ã¶¿ø, ±¸º»Ã¶, ¹Ú°æ¼ö, ¹ÚÁØÇõ, ÃÖâȯ, "ºñ´ëĪ ÀÏÇÔ¼ö ±Ý¼Ó ¿£Áö´Ï¾î¸µÀ» »ç¿ëÇÑ ZrO2 ½Ã³À½º MFMIS ¹Ú¸·Æ®·£Áö½ºÅÍ", Çѱ¹¹ÝµµÃ¼µð½ºÇ÷¹À̱â¼úÇÐȸ Ãá°èÇмú´ëȸ, ±¸¹ÌÄÚ (Gumico), ±¸¹Ì, 2024.05
• 305. Boncheol Ku, Jae-Min Sim, Jae Seok Hur, Jae Kyeong Jeong, Yun-Heub Song, and Changhwan Choi, "A Novel 3D Gate-All-Around Vertical FeFET with Back-Gate Structure for Disturbance-Less Program Operation", IEEE International Memory Workshop (IMW), Grand Walkerhill Seoul, Korea, 2024.05
• 304. ÀÌÂù½½, ±è¼±¹ü, ±è±Ô¸®, ÃÖâȯ, "Sn Á¶¼ººñ º¯È­¿¡ µû¸¥ ALD N-type IGTO TFT¿Í P-type Si FETÀÇ M3D ÀÌÁ¾ÁýÀû CMOS ÀιöÅÍ", ´ëÇѱݼÓÀç·áÇÐȸ Ãá°èÇмú´ëȸ, â¿øÄÁº¥¼Ç¼¾ÅÍ, 2024.04
• 303. ½ÉÁöÇö, ÀÓÇöÁø, ±èÇüÁØ, ±è±â¼·, ¾ÈÈ¿Áø, ÃÖâȯ, "ÀÚ±âÁ¶¸³´ÜºÐÀÚ¸·À» ÀÌ¿ëÇÑ Ru ¹Ú¸·ÀÇ ¼±ÅÃÀû ¿µ¿ª ÁõÂø °øÁ¤À» ÅëÇÑ Ç¥¸é¹ÝÀÀ ¸ÞÄ¿´ÏÁò", ´ëÇѱݼÓÀç·áÇÐȸ Ãá°èÇмú´ëȸ, â¿øÄÁº¥¼Ç¼¾ÅÍ, 2024.04
• 302. ±èÇüÁØ, À̱⿵, Á¤Å¿ø, ½Å°Ç¿í, ±è»ó¿ø, ÃÖâȯ, "ÄÚ¹ßÆ® ÇÕ±ÝÀ» Àû¿ëÇÑ Â÷¼¼´ë ¹è¼± ¼ÒÀçÀÇ Æ¯¼º ¿¬±¸", ´ëÇѱݼÓÀç·áÇÐȸ Ãá°èÇмú´ëȸ, â¿øÄÁº¥¼Ç¼¾ÅÍ, 2024.04
• 301. San Park, Sejin Kim, Sehyeon Choi, Boncheol Ku, Jun Woo Park, Pil Seong Park, Sang Hyun Ji,and Changhwan Choi, "Impacts of Annealing on the Operation Characteristics of Phase Change Memory Using Ge2Sb2Te5 (GST) Material", 31ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), °æÁÖÈ­¹éÄÁº¥¼Ç¼¾ÅÍ, 2024.01
• 300. JunHyeok Park, Chulwon Chung, Boncheol Ku, Seung Hyeon Yun, Kyungsoo Park, Yu Jeong Choi,and Changhwan Choi, "The Effect of Seed Layer Engineering on the Performance of HZO-Based Ferroelectric Field Effect Transistor(FeFET)", 31ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), °æÁÖÈ­¹éÄÁº¥¼Ç¼¾ÅÍ, 2024.01
• 299. SeungHyeon Yun, Chulwon Chung, Boncheol Ku, Junhyeok Park, Kyungsoo Park, Yu Jeong Choi,and Changhwan Choi, "Non-volatile Behavior in ZrO2-Based Ferroelectric-like Memory Devices Using Asymmetric Metal Work-function Engineering", 31ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), °æÁÖÈ­¹éÄÁº¥¼Ç¼¾ÅÍ, 2024.01
• 298. Kyungsoo Park, Chulwon Chung, Boncheol Ku, Seung Hyeon Yun, Junhyeok Park, Yu Jeong Choi,and Changhwan Choi, "CF4 Plasma Passivation on Laminated-ALD HZO MFIS-FeFET", 31ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), °æÁÖÈ­¹éÄÁº¥¼Ç¼¾ÅÍ, 2024.01
• 297. Gyu Lee Kim, Sun Bum Kim, Chan seul Lee,and Changhwan Choi, "The Impact of CF4 Plasma Treatment on the Performance of HfO2/IGZO Thin film Transistors", 31ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), °æÁÖÈ­¹éÄÁº¥¼Ç¼¾ÅÍ, 2024.01
• 296. Ji Hyeon Sim, Chae Won Kim, Hyun Jin Lim, Ki Sub Kim, Hyeong Jun Kim, Hyo Jin Ahn,and Changhwan Choi, "Area-selective-deposition (ASD) of Ruthenium (Ru) Thin Film Using Self-assembled Monolayer (SAM) through Surface Modification", 31ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), °æÁÖÈ­¹éÄÁº¥¼Ç¼¾ÅÍ, 2024.01
• 295. Chan Seul Lee, Sun Bum Kim, Gyu Lee Kim,and Changhwan Choi, "Heterogeneous Inverter Using N-type IGTO TFT Prepared by Atomic-layer Deposition with Various Channel Compositions on the P-type Si FET", 31ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), °æÁÖÈ­¹éÄÁº¥¼Ç¼¾ÅÍ, 2024.01
• 294. Hyeong Jun Kim, Kiyoung Lee, Tae Won Jeong, Keon Wook Shin, Sang Won Kim,and Changhwan Choi, "Reduced Size Effect of Resistivity in Cobalt-Palladium (CoPd) Alloys for Advanced Interconnection Applications", 31ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), °æÁÖÈ­¹éÄÁº¥¼Ç¼¾ÅÍ, 2024.01
• 293. Sehyeon Choi, Sejin Kim, San Park, Boncheol Ku, Hanmei Choi, Hyungjun Kim, Jaehyun Yang,and Changhwan Choi, "Impacts of Hydrogen Profile on The Reliability Characteristics of Flash Memory Using SiO2/Si3N4/SiO2 Stack Film by Post Annealing", 31ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), °æÁÖÈ­¹éÄÁº¥¼Ç¼¾ÅÍ, 2024.01
• 292. Sun Bum Kim, Chan seul Lee, Gyu Lee Kim,Sangyeun Park, Doheon Koo, Yeongu Choi, Joo Young Pyun, Chang Hoon Lee, Hongyun So, Kwan Kyu Park,and Changhwan Choi, "The Development of multiple re-distiribution layer (RDL) using FEOL photolithography process for the 2.xD packaging applications", 31ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), °æÁÖÈ­¹éÄÁº¥¼Ç¼¾ÅÍ, 2024.01
• 291. Sun Bum Kim, Chan seul Lee, Gyu Lee Kim, Jae Seok Hur, Ho Young Lee, Jae Kyeong Jeong,and Changhwan Choi, "M3D Hybrid Inverter Using Si p-FETs and Indium-Based Oxide Semiconductor n-TFTs", 31ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), °æÁÖÈ­¹éÄÁº¥¼Ç¼¾ÅÍ, 2024.01
• 290. Boncheol Ku, Shanmukh Kutagulla, Deji Akinwande,and Changhwan Choi, "Heterogeneous 3D Vertical Inverter of MoS2 nFET on Si pMOSFET Using Sequential Fabrication Process", 31ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), °æÁÖÈ­¹éÄÁº¥¼Ç¼¾ÅÍ, 2024.01
• 289. Sun Bum Kim, Chan seul Lee, Gyu Lee Kim, Jae Seok Hur, Ho Young Lee, Jae kyeong Jeong,and Changhwan Choi, "Heterogeneously Integrated Hybrid Vertical Inverter by Stacking Indium-Based Oxide TFT on the Si p-MOSFET", NANO CONVERGENCE CONFERENCE(NCC) 2024, ´ëÀüÄÁº¥¼Ç¼¾ÅÍ, 2024.01
• 288. Gyu Lee Kim, Sun Bum Kim, Chan seul Lee, Sang Yeun Park, Do Heon Koo, Yeongu Choi, Joo Young Pyun, Chang Hoon Lee, Hong Yun So, Kwan Kyu Park, and Changhwan Choi, "Development of Multiple Redistribution Layer (RDL) Using FEOL photolithography Toward 2.xD Packaging Technology", NANO CONVERGENCE CONFERENCE(NCC) 2024, ´ëÀüÄÁº¥¼Ç¼¾ÅÍ, 2024.01

2023

• 287. Chan Seul Lee, Sun Bum Kim, and Changhwan Choi, "Heterogeneous Monolithic 3D Integration for Hybrid Vertical Inverter using n-type IGTO TFT on p-type Si TFT", Korea International Semiconductor Conference on Manufacturing Technology (KISM), Paradise Hotel Busan, 2023.11
• 286. Sun Bum Kim, Chan Seul Lee, Gyu Lee Kim, Sang Yeun Park, Do Heon Koo, Yeong Gu Choi, Joo Young Pyun, Chang Hoon Lee, Hong Yun So, Kwan Kyu Park, and Changhwan Choi, "FEOL Process-based Redistribution Layer (RDL) Formation", Korea International Semiconductor Conference on Manufacturing Technology (KISM), Paradise Hotel Busan, 2023.11
• 285. Sun Bum Kim, Chan Seul Lee, Gyu Lee Kim, Jae Seok Hur, Jae kyeong Jeong and Changhwan Choi, "Heterogeneous Inverter using Si FET and Oxide Semiconductor TFT", Korea International Semiconductor Conference on Manufacturing Technology (KISM), Paradise Hotel Busan, 2023.11
• 284. Sun Bum Kim, Gyu Lee Kim, Sang Yeun Park, Do Heon Koo, Yeong Gu Choi, Joo Young Pyun, Chang Hoon Lee, Hong Yun So, Kwan Kyu Park, and Changhwan Choi, "Development of RDL unit process through FEOL photolithography", The 21st International Symposium on Microelectronics and Packaging (ISMP), Paradise Hotel Busan, 2023.10
• 283. Boncheol Ku, and Changhwan Choi, "Electrical Characteristics of FeFET with Atomic Layer Deposited HZO Thin Film and IGO Channel for Flash Memory Application", 2023 European Materials Research Society (EMRS), University of Techonology in Warsaw (Poland), 2023.09
• 282. Boncheol Ku, Jae Seok Hur, Jae Kyeong Jeong, and Changhwan Choi, "3D Gate-All-Around FeFET using Zr-doped HfO2 and Indium Gallium Oxide", ALD/ALE 2023, Bellevue, Washington, USA , 2023.07
• 281. Moon Suk Choi, Bon Cheol Ku, Sun Bum Kim, Chul Won Chung and hanghwan Choi, "Work-Function Modulation using Atomic Layer Deposited TaN ad Ternary TaAlN Metal Gate", ALD/ALE 2023, Bellevue, Washington, USA , 2023.07
• 280. ÃÖÀ¯Á¤, Á¤Ã¶¿ø, ±¸º»Ã¶, ±è¼¼Áø, ÃÖâȯ, "¹Ý °­À¯Àüü¸¦ »ðÀÔÇØ ¼öÁ¤µÈ °­À¯Àüü ±â¹Ý Àü°è È¿°ú Æ®·£Áö½ºÅ͸¦ ÀÌ¿ëÇÑ ¸ÖƼ ·¹º§ ¼¿ ºñÈֹ߼º ¸Þ¸ð¸®", ´ëÇѱݼÓÀç·áÇÐȸ Ãá°èÇмú´ëȸ, Á¦ÁÖ±¹Á¦ÄÁº¥¼Ç¼¾ÅÍ(ICC JEJU), 2023.04
• 279. ±èä¿ø, ÃÖ¹®¼®, ½ÉÁöÇö, ±èÇüÁØ, ÃÖâȯ, "Â÷¼¼´ë µð¹ÙÀ̽º¸¦ À§ÇÑ ÀÚ±âÁ¶¸³ ´ÜÃþÀ» ÀÌ¿ëÇÑ ÄÚ¹ßÆ® ±Ý¼ÓÃþÀÇ ¼±ÅÃÀû ¿µ¿ª ¿øÀÚÃþ ÁõÂø", ´ëÇѱݼÓÀç·áÇÐȸ Ãá°èÇмú´ëȸ, Á¦ÁÖ±¹Á¦ÄÁº¥¼Ç¼¾ÅÍ(ICC JEJU), 2023.04
• 278. ±è¼±¹ü, ÀÌÂù½½, ±è±Ô¸®, ÃÖâȯ, "Monolithic 3D integrationÀ» ÀÌ¿ëÇÑ p-MOSFET ¹× ºñÁ¤Áú In-Ga-Sn-O(IGTO) TFT ÇÏÀ̺긮µå ¼öÁ÷ ÀιöÅÍ ±¸Çö", ´ëÇѱݼÓÀç·áÇÐȸ Ãá°èÇмú´ëȸ, Á¦ÁÖ±¹Á¦ÄÁº¥¼Ç¼¾ÅÍ(ICC JEJU), 2023.04
• 277. ±¸º»Ã¶, ÃÖâȯ, "IGO ä³Î/HZO °­À¯Àüü ¹Ú¸·ÀÌ Àû¿ëµÈ ¼öÁ÷Çü FeFET", ´ëÇѱݼÓÀç·áÇÐȸ Ãá°èÇмú´ëȸ, Á¦ÁÖ±¹Á¦ÄÁº¥¼Ç¼¾ÅÍ(ICC JEJU), 2023.04
• 276. Á¤Ã¶¿ø, ÃÖÀ¯Á¤, ÃÖ¼¼Çö, ÃÖâȯ, "HZO ¹Ú¸·Ãþ ±¸¼º¿¡ µû¸¥ °­À¯Àüü ¸Þ¸ð¸® Ư¼º ºÐ¼®", ´ëÇѱݼÓÀç·áÇÐȸ Ãá°èÇмú´ëȸ, Á¦ÁÖ±¹Á¦ÄÁº¥¼Ç¼¾ÅÍ(ICC JEJU), 2023.04
• 275. ÃÖ¹®¼®, ±èä¿ø, ±èÇüÁØ, ½ÉÁöÇö, ÃÖâȯ, "¿øÀÚÃþ ¹Ú¸·À¸·Î Çü¼ºµÈ ±Ý¼Ó ÁúÈ­¹°ÀÇ Al µµÇο¡ µû¸¥ ÀÏÇÔ¼ö Ư¼ºº¯È­", ´ëÇѱݼÓÀç·áÇÐȸ Ãá°èÇмú´ëȸ, Á¦ÁÖ±¹Á¦ÄÁº¥¼Ç¼¾ÅÍ(ICC JEJU), 2023.04
• 274. Yu Jeong Choi, Chul Won Chung, Bon Cheol Ku, Jin Ho Park, and Changhwan Choi, "Multilevel Cell Nonvolatile Memory with Ferroelectric Modulated Antiferroelectric Superlattice Field Effect Transistors (FETs)", 30ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2023.01
• 273. Chae Won Kim, Moon Suk Choi, Ji Hyeon Sim, Hyeong Jun Kim, and Changhwan Choi, "Area-Selective Atomic Layer Deposition of Cobalt Metal Layer Using Self-Assembled Monolayer (SAM)", 30ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2023.01
• 272. Boncheol Ku, Jae Seok Hur, Jae Kyeong Jeong and Changhwan Choi, "First Demonstration of 3D Vertical Gate-All-Around (GAA) NAND Flash Memory Using ALD Ferroelectric HZO and IGO Channel", 30ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2023.01
• 271. Chul Won Chung, Yu Jeong Choi, Jin Ho Park, Se Hyeon Choi, and Changhwan Choi, "HZO ¹Ú¸·³» »ðÀÔÃþÀÇ Á¶°Ç¿¡ µû¸¥ °­À¯Àüü ¸Þ¸ð¸® ¹× ½Ã³À½º Ư¼º ¿¬±¸", 30ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2023.01
• 270. Moon Suk Choi, Chae Won Kim, Sun Bum Kim, Ji Hyeon Sim, Hyeong Jun Kim, Ju Hwan Kim, Jun Woo Park, Pil Seong Jeong, Sang Hyun Ji, and Chang Hwan Choi, "The controlled nitrogen profile and amount in SiO2 thin film using remote plasma oxidation and nitridation for DRAM application", 30ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2023.01

2022

• 269. Moonsuk Choi, Boncheol Ku, Yu-Rim Jeon, Chulwon Chung, and Changhwan Choi, "Atomic-Layer Deposited Tantalum-based Metal Gates (TaN,TaAlC, TaAlN, TaCoN) for Multiple Vth Modulation", Solid State Devices and Materials (SSDM), Chiba, Japan, 2022.09
• 268. Changhwan Choi, "3D Integration using Wafer Layer Transfer Technology", Korean International Semiconductor Conference On Manufacturing Technology (KISM), Busan Paradise Hotel, 2022.11
• 267. Yu-Rim Jeon, Chulwon Chung, Jin Ho Park, Donguk Seo, and Changhwan Choi, "Hardware Neuromorphic System with Diffusion Memristor-based Artificial Synapses using Heterogeneous Integration", Korean International Semiconductor Conference On Manufacturing Technology (KISM), Busan Paradise Hotel, 2022.11
• 266. Sun Bum Kim, Chan Seul Lee, Jin Ho Park, Se Hyeon Choi, and Changhwan Choi, "Wafer Layer Transfer for Monolithic 3D (M3D) Integration using SOI Substrate and Smart-Cut", Korean International Semiconductor Conference On Manufacturing Technology (KISM), Busan Paradise Hotel, 2022.11
• 265. Sun Bum Kim, Chan Seul Lee, Se Hyeon Choi, Se Jin Kim, Yu Jeong Choi, Chae Won Kim and Changhwan Choi, "Heterogenous Hybrid Inverter Using Monolithic 3D Integration", Korean International Semiconductor Conference On Manufacturing Technology (KISM), Busan Paradise Hotel, 2022.11
• 264. Boncheol Ku, Ye Rim Shin, Se Jin Kim and Changhwan Choi, "Dual-gated flash memory device characteristics with ferroelectric Zr-doped HfO2 thin film and IGZO oxide semiconductor", The 7th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), Jeju, Korea, 2022.11
• 263. Yu-Rim Jeon, Donguk Seo, Yoonmyung Lee, and Changhwan Choi, "Pattern-recognizable neuromorphic system with 12¡¿14 diffusion memristor array", The 7th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), Jeju, Korea, 2022.11
• 262. Á¶Çöö, ±è¼±¹ü, ÃÖâȯ, "ºñÁ¤Áú IGTO TFT¿Í ¸ð³î¸®½Ä 3D ÁýÀûÈ­¸¦ ÅëÇÑ ¼öÁ÷ ÀιöÅÍ ±¸Çö", Çѱ¹¹ÝµµÃ¼µð½ºÇ÷¹À̱â¼úÇÐȸ Ãá°èÇмú´ëȸ, ¼Ûµµ Ç×°ø¿ìÁÖ»êÇÐÀ¶ÇÕ¿ø, 2022.05
• 261. Á¶Çöö, ±è¼±¹ü, ±¸º»Ã¶, Á¤Ã¶¿ø, ÃÖâȯ, "Back-End-of-Line Compatible In-Ga-Sn-Oxide TFT for High Performance Logic Application using Monolithic 3D Integration", Çѱ¹Àç·áÇÐȸ Ãá°èÇмú´ëȸ, ½òºñÄ¡ »ïô, 2022.05
• 260. ±¸º»Ã¶, ÇãÀç¼®, Á¤Àç°æ, ÃÖâȯ, "°í¹Ðµµ, ÀúÀü¾Ð, ºü¸¥ ¼Óµµ¸¦ À§ÇÑ HZO °­À¯Àüü¿Í IGO ä³ÎÀÌ Àû¿ëµÈ 3D-GAA ±¸Á¶ NAND Ç÷¡½Ã ¸Þ¸ð¸®", Çѱ¹Àç·áÇÐȸ Ãá°èÇмú´ëȸ, ½òºñÄ¡ »ïô, 2022.05
• 259. ÃÖâȯ, "Àΰø ½Ã³À½º Àç·á¿Í ´º·Î¸ðÇÈ ½Ã½ºÅÛ", Çѱ¹¼¼¶ó¹ÍÇÐȸ Ãá°èÇмú´ëȸ - 5´ë ¹Ì·¡±â¼ú ½ÉÆ÷Áö¿ò: ¹Ì·¡ ¹ÝµµÃ¼ ¼ÒÀÚ ¹× ÀÀ¿ë ±â¼ú [Keynote ¹ßÇ¥], ¿©¼ö ¿¢½ºÆ÷ ÄÁº¥¼Ç ¼¾ÅÍ, 2022.04
• 258. Changhwan Choi, "Monolithic 3D Integration Process and Its Device Applications", 6th IEEE Electron Devices Technology and Manufacturing (EDTM), Oita, Japan, 2022.03 - Invited -
• 257. Á¶Çöö, ÇÑÈÆÈñ, Á¤ÀçÁß, Á¶º´Áø, ÃÖâȯ, "The Process Development for Monolithic 3D Integration Using Large-Scale Silicon-On-Insulator(SOI) Wafer Bonding", 29ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2022.01
• 256. ¿ÕÅø³, ÇãÈ«À§, Á¤Àç°æ, ÃÖâȯ, "UV Light-assisted Erasing of In-Ga-Sn-O (IGTO) Thin Film Transistor with Al2O3/HfO2/Al2O3 for the Flash Memory Application", 29ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2022.01
• 255. ÀÓÁö¿¬, ½Å¿¹¸², ±¸º»Ã¶, ÃÖâȯ, "The Improved Ferroelectric Characteristics of Ferroelectric Memory Devices Using ALD SiO2 and Al2O3 Interlayers", 29ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2022.01
• 254. ½ÅÈñ´ã, ½Å¿¹¸², ±¸º»Ã¶, ÃÖâȯ, "The Electrical Characteristics of ALD Si-doped HfO2 Ferroelectric FET Device", 29ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2022.01
• 253. Àå¿ø±¹, ÃÖ¹®¼®, ÃÖâȯ, "The Formation of Dipole to Modulate Flatband Voltage (VFB) Using ALD Al2O3 on the HfO2-Based Si and Ge MOS Devices", 29ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2022.01
• 252. ±èÅÂÇö, ±èµÎÈ£, ±¸º»Ã¶, Á¤Ã¶¿ø, ÃÖâȯ, "Anti-Ferroelectric Properties of the ALD Si-doped HfO2 Devices with Tungsten and Molybdenum Metal Contacts", 29ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2022.01
• 251. ÀüÀ¯¸², ÃÖâȯ, "Hardware-based 3D Neuromorphic System with CMOS Circuits and 12¡¿14 RRAM Array", Nano Convergence Conference (NCC) 2022, °ïÁö¾Ï¸®Á¶Æ®, 2022.01 - Çлý±¸µÎ ¹ßÇ¥»ó -
• 250. ±¸º»Ã¶, ÃÖâȯ, "Photonic Synapse with Colloidal Perovskite Quantum Dot CsPbI3", Nano Convergence Conference (NCC) 2022, °ïÁö¾Ï¸®Á¶Æ®, 2022.01
• 249. ÃÖ¹®¼®, ÃÖâȯ, "Alternative Metal Gate by Incorporating AlN into ALD TaN Using TBTDET and TaCl5 Precursors", Nano Convergence Conference (NCC) 2022, °ïÁö¾Ï¸®Á¶Æ®, 2022.01

2021

• 248. Boncheol Ku, Bonkee Koo, Min Jae Ko, and Changhwan Choi, "Photonic Synapse based on Colloidal Perovskite Quantum Dot CsPbI3 for Neuromorphic Computing System", IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 2021.12
• 247. Àå¼®¹Î, ÃÖâȯ, "ÇöóÁ 󸮸¦ ÅëÇØ Çâ»óµÈ ½Å·Ú¼ºÀ» °®´Â ¹Ú¸· Æ®·£Áö½ºÅÍ ±â¹Ý Ç÷¡½Ã ¸Þ¸ð¸® ¼ÒÀÚ ¿¬±¸", Çѱ¹Àç·áÇÐȸ Ãß°èÇмú´ëȸ, °æÁÖ ¶óÇÑÈ£ÅÚ, 2021.11
• 246. Á¤Ã¶¿ø, ÀüÀ¯¸², ÇÑÈÆÈñ, ÃÖ¹®¼®, ÃÖâȯ, "GeSe Ä®ÄÚÁö³ªÀ̵å Àç·áÀÇ ÁõÂø Á¶°Ç¿¡ µû¸¥ ¸Þ¸ð¸® ¹× ½Ã³À½º Ư¼º ¿¬±¸", ´ëÇѱݼÓÀç·áÇÐȸ Ãß°èÇмú´ëȸ, Á¦ÁÖ±¹Á¦ÄÁº¥¼Ç¼¾ÅÍ, 2021.10
• 245. Tae Sung Lee, Haider Abbas, Duho Kim, Yu-Rim Jeon, Boncheol Ku and Changhwan Choi, "The Effects of Different ALD Oxidants on the Synaptic Characteristics of HfO2 Conductive Bridge Random Access Memory", International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology - (IWDTF), On-line Virtual, 2021.11
• 244. Duho Kim, Yu-Rim Jeon, Boncheol Ku, and Changhwan Choi, "Improved Ferroelectric Characteristics and Synaptic Function using ALD La-doped HfO2 Thin Film and TaN Electrode", International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology - (IWDTF), On-line Virtual, 2021.11
• 243. Haider Abbas, Andrey S. Sokolov, Yu-Rim Jeon, Boncheol Ku, and Changhwan Choi, "Emulation of Synaptic Plasticity in Memristor Crossbar Arrays for Neuromorphic Applications", International Conference on Memristive Materials, Devices & Systems (MEMRISYS), Tsukuba, Japan, 2021.11
• 242. Yu-Rim Jeon, Haider Abbas, Boncheol Ku, Chulwon Chung, and Changhwan Choi, "3D Neuromorphic System using Memristor Neuron and Fully Depleted Silicon-On-Insulator Field Effect Transistor Synapse Devices", International Conference on Memristive Materials, Devices & Systems (MEMRISYS), Tsukuba, Japan, 2021.11
• 241. Yu-Rim Jeon, Haider Abbas, and Changhwan Choi, "3-Dimensional Neuromorphic System Consisting of MOSFET and RRAM Crossbar Array Devices for Artificial Hardware Device", International Union of Materials Research Societies - International Conference in Asia (IUMRS-ICA), Jeju (ICC), Korea, 2021.10
• 240. ÃÖâȯ, "Low Temperature and Ion-Cut Based Monolithic 3D Process Integration Platform Incorporated with CMOS, RRAM and Photo- Sensor Circuits", ´ëÇÑÀüÀÚ°øÇÐȸ ÇÏ°èÇмú´ëȸ - ±¹Á¦¿ì¼öÇÐȸ ¹ßÇ¥ ¸®ºä ¼¼¼Ç [ÃÊû¹ßÇ¥], Á¦ÁÖ (Áß¹®), 2021.06
• 239. ÃÖâȯ, "Â÷¼¼´ë ¹ÝµµÃ¼ ¼ÒÀÚ ÁýÀû °íÁ¤ ¹× ÀÀ¿ë: 3D Integration", Çѱ¹¼¼¶ó¹ÍÇÐȸ Ãá°èÇмú´ëȸ - 4´ë ¹Ì·¡±â¼ú ½ÉÆ÷Áö¿ò [Keynote ¹ßÇ¥], â¿øÄÁ¹ø¼Ç¼¾ÅÍ (CECO), 2021.06
• 238. ½ÅÀ±Ã¶, ±¸º»Ã¶, ÀÌ¿µÁØ, ±èÅÂÇå, ÃÖâȯ, "Influence of Post-Cooling Process on the Ferroelectric Properties of Lanthanum-doped Hafnium Oxide (La:HfO2) Thin Film", 28ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), ¿Â¶óÀÎ, 2021.02
• 237. Àå¼®¹Î, Á¤¼ø¿À, ±èÅÂÇå, ¿ÕÅø³, ÃÖâȯ, "Improved Memory Characteristics of Thin Film Transistor (TFT) with Amorphous In-Ga-Zn-O (a-IGZO) and High-K Thin Films", 28ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), ¿Â¶óÀÎ, 2021.02
• 236. ÃÖ¹®¼®, ÀÌÁÖÇö, ±è¹ÎÇõ, ±èÀ§³², Á¤¼±¿õ, ÃÖâȯ, "ALD TaAlN Metal Gate using TaCl5 and TMA Precursors", 28ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), ¿Â¶óÀÎ, 2021.02
• 235. ±èÀ§³², ÃÖ¹®¼®, ÀÌÁÖÇö, ±è¹ÎÇõ, ÃÖâȯ, "Investigation of the VFB Modulation by ALD La2O3 Thin Film Capped HKMG Device for Gate Last Process", 28ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), ¿Â¶óÀÎ, 2021.02
• 234. ±èµÎÈ£, ±¸º»Ã¶, ±èÅÂÇå, ÃÖâȯ, "Ferroelectric Al-doped HfO2 Thin Film Transistors for Analog Synaptic Device", 28ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), ¿Â¶óÀÎ, 2021.02
• 233. ÀÌÁÖÇö, ÃÖ¹®¼®, ±è¹ÎÇõ, ±èÀ§³², ÃÖâȯ, "Work-Function Engineering and Improved Stability using PEALD TiCoN Metal Gate for HKMG Device", 28ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), ¿Â¶óÀÎ, 2021.02
• 232. ±¸º»Ã¶, ½ÅÀ±Ã¶, ±èµÎÈ£, ±èÅÂÇö, ÃÖâȯ, "Thin Film Transistor with Ferroelectric Al-doped HfO2 Thin Film and IGZO Channel for Non-volatile Memory Application", Nano Convergence Conference (NCC) 2021, °ïÁö¾Ï ¸®Á¶Æ®, 2021.01
• 231. ±è¹ÎÇõ, ÃÖ¹®¼®, ÀÌÁÖÇö, ±èÀ§³², ÃÖâȯ, "Work-Function Modulation of ALD TaN Metal Gate using Different Precursor and Capping Materials in HfO2-based MOS Device", Nano Convergence Conference (NCC) 2021, °ïÁö¾Ï ¸®Á¶Æ®, 2021.01

2020

• 230. Hoohee Han, Rino Choi, Seong-Ook Jung, Sung Woo Chung, Byung Jin Cho, S. C. Song, and Changhwan Choi, "Low Temperature and Ion-Cut Based Monolithic 3D Process Integration Platform Incorporated with CMOS, RRAM and Photo-Sensor Circuits", IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 15.6, 2020.12
• 229. Boncheol Ku, Seonjun Choi, Yunheub Song, and Changhwan Choi,, "Fast Thermal Quenching on the Ferroelectric Al:HfO2 Thin Film with Record Polarization Density and Flash Memory Application", Symposium on VLSI Technology (VLSI) [Hightlighted Paper in Memory Session], Honolulu, HI, USA, TF 2.5, 2020.06
• 228. Youngjun Lee, Boncheol Ku, Ma Yue, Yooncheol Shin, and Changhwan Choi, "Impact of O3 on the Ferroelectric Properties and Its Time-Dependent Deterioration of ALD HfxZr1-xO2 Thin Film", The 6th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), Jeju, Korea, 2020.11
• 227. Dohee Lee, Boncheol Ku, Andrey S. Sokolov, Yu-Rim Jeon, Haider Abbas, Won Bin Lim, and Changhwan Choi, "Light-Simulated Synaptic Characteristics of Photo Transistor with Organic-Inorganic Hybrid Halide Perovskites", The 6th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), Jeju, Korea, 2020.11
• 226. Yooncheol Shin, Boncheol Ku, Youngjun Lee, and Changhwan Choi, "Influence of Oxidant Types on the Ferroelectric Properties of ALD Undoped HfO2 Thin Film", The 6th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), Jeju, Korea, 2020.11
• 225. ±è¹ÎÇõ, ÃÖ¹®¼®, ÀÌÁÖÇö, ±èÀ§³², ÃÖâȯ, "Effective Work Function Modulation of ALD TaN/HfO2 MOS Devices with Different Capping Materials", 27ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2020.02 - Best Poster Award -
• 224. Á¤¼ø¿À, ¿ÕÈÍ, ÇÑÈÆÈñ, ÃÖâȯ, "Flash Memory Characateristics of Thin Film Transistor (TFT) using C-Axis Aligned Crystalline IGZO (CAAC-IGZO) Channel Material", 27ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2020.02
• 223. ÇÏÀÌ´õ ¾Æ¹Ù½º, ÃÖâȯ, "Synaptic and Nonvolatile Memory Characteristics in Ag/HfO2/Pt Structured Conductive Bridge Random Access Memory Device", 27ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2020.02
• 222. ÀÌ¿µÁØ, ±¸º»Ã¶, ¸¶¿­, ½ÅÀ±Ã¶, ÃÖâȯ, "Impacts of Film Thickness and Rapid Thermal Annealing on the Ferroelectric Properties of Nano-Laminated ALD HfxZrO1-xO2 Thin Film", 27ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2020.02
• 221. ¾Èµå·¹, ÀüÀ¯¸², ÇÏÀÌ´õ ¾Æ¹Ù½º, ÃÖâȯ, "Threshold Switching Phenomenon in 2D MXene Material for Electronic Synapse Applications", 27ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2020.02
• 220. ÀüÀ¯¸², ±è¿ëÈÆ, ÃÖâȯ, "CVD NbSe2 Buffer Layer to Control Active Metal Ions in Ag/NbSe2/HfO2/Pt Device for Stable Synaptic Functions", 27ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2020.02
• 219. À̵µÈñ, ¾Èµå·¹, ±¸º»Ã¶, ÀüÀ¯¸², ÇÏÀÌ´õ ¾Æ¹Ù½º, ÃÖâȯ, "PEALD SiO2 as Diffusion Limit Layer in Cu/SiO2/ZrO2/Pt Synaptic Device", 27ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2020.02 - Best Poster Award -
• 218. ±è¹ÎÇõ, ÇÑÈÆÈñ, ÃÖ¹®¼®, ÀÌÁÖÇö, ±èÀ§³², ÃÖâȯ, "HKMG ¼ÒÀÚ Àû¿ëÀ» À§ÇÑ ¿øÀÚÃþ ÁõÂø ¹æ½ÄÀÇ TaN ¹Ú¸· Çü¼º ¹× ºÐ¼®", ´ëÇѱݼÓÀç·áÇÐȸ Ãá°èÇмú´ëȸ, Virtual Conference, 2020.04
• 217. ÀÌÁÖÇö, ÃÖ¹®¼®, ÇÑÈÆÈñ, ±è¹ÎÇõ, ±èÀ§³², ÃÖâȯ, "Co(MeCp)2 Àü±¸Ã¼¿Í NH3 ¹ÝÀÀ °¡½º¸¦ È°¿ëÇÑ ALD Cobalt Layer Çü¼º ¹× ºÐ¼®", ´ëÇѱݼÓÀç·áÇÐȸ Ãá°èÇмú´ëȸ, Virtual Conference, 2020.04 - Best Poster Award -
• 216. ÀÌ¿µÁØ, ±¸º»Ã¶, ½ÅÀ±Ã¶, ±èÅÂÇö, ÃÖâȯ, "O3 ÁÖÀÔ ½Ã°£°ú ³Ã°¢ ¼Óµµ°¡ HfxZr1-xO2 ¹Ú¸·ÀÇ °­À¯Àü¼º¿¡ ¹ÌÄ¡´Â ¿µÇâ", ´ëÇѱݼÓÀç·áÇÐȸ Ãß°èÇмú´ëȸ, Virtual Conference, 2020.10 - Best Poster Award -
• 215. ±è¹ÎÇõ, ÃÖ¹®¼®, ÀÌÁÖÇö, ±èÀ§³², ÃÖâȯ , "Tantalum Pentachloride (TaCl5) Àü±¸Ã¼¸¦ È°¿ëÇÑ ALD TaN ±Ý¼Ó ¹Ú¸· Çü¼º ¹× ºÐ¼®", ´ëÇѱݼÓÀç·áÇÐȸ Ãß°èÇмú´ëȸ, Virtual Conference, 2020.10
• 214. ±¸º»Ã¶, ½ÅÀ±Ã¶, ±èµÎÈ£, ±èÅÂÇö, ÃÖâȯ , "The Effect of Oxygen Vacancy on the Coerceive Field of Al-doped Hafnium Oxide Ferrroelectric Thin Film during Wake-Up Process", Çѱ¹¼¼¶ó¹ÍÇÐȸ Ãß°èÇмú´ëȸ, ´ëÀü DCC, 2020.11
• 213. Á¤¼ø¿À, Àå¼®¹Î, ±èÇöÅÂ, ÃÖâȯ, "°íÀ̵¿µµ C- Ãà Á¤·Ä °áÁ¤ IGZO (CAAC-IGZO)¿Í High-K ¹Ú¸· Àç·á¸¦ Àû¿ëÇÑ Ç÷¡½Ã ¸Þ¸ð¸® Ư¼º", Çѱ¹¼¼¶ó¹ÍÇÐȸ Ãß°èÇмú´ëȸ, ´ëÀü DCC, 2020.11
• 212. ±èÀ§³², ÃÖ¹®¼®, ÀÌÁÖÇö, ±è¹ÎÇõ, ÃÖâȯ , "³·Àº ÀÏÇÔ¼ö Àû¿ëÀ» À§ÇÑ ¿øÀÚÃþ ÁõÂø¹ýÀ¸·Î Çü¼ºµÈ TaAl ±Ý¼Ó Àü±Ø", Çѱ¹Àç·áÇÐȸ ÃáÃß°è ÅëÇÕÇмú´ëȸ, Á¦ÁÖ Èִнº ¼·ÁöÄÚÁö, 2020.11
• 211. ÃÖ¹®¼®, ÀÌÁÖÇö, ±è¹ÎÇõ, ±èÀ§³², ÃÖâȯ , "À¯È¿ ÀÏÇÔ¼ö Á¦¾î À§ÇÑ ALD TaAlN ±Ý¼Ó ¹Ú¸· Çü¼º ¹× Ư¼º", Çѱ¹Àç·áÇÐȸ ÃáÃß°è ·ŽÇÕÇмú´ëȸ, Á¦ÁÖ Èִнº ¼·ÁöÄÚÁö, 2020.11
• 210. ¾Èµå·¹ ¼ÒÄݷκê, ÇÏÀÌ´õ ¾Æ¹Ù½º, ÀüÀ¯¸², ±¸º»Ã¶, ÃÖâȯ, "Synaptic Plasticity in Flexible Ar Plasma Pre-treated Ti/TaOx/IGZO/Pt Heterostructure Device for Neuromorphic Applications", Nano Convergence Conference (NCC), °­ÃÌ ¿¤¸®½Ã¾È ¸®Á¶Æ®,2020.01
• 209. ÀüÀ¯¸², ±è¿ëÈÆ, ÃÖâȯ, "Improved Stability of NbSe2 Interface Layer in Ag-based CBRAM for Synaptic Functioning", Nano Convergence Conference (NCC), °­ÃÌ ¿¤¸®½Ã¾È ¸®Á¶Æ®,2020.01

2019

• 208. Andrey S. Sokolov, Yu-Rim Jeon, Hoonhee Han, Boncheol Ku, Gul Hassan, Haider Abbas, and Changhwan Choi, "The Size Modulation of Nitrogen-Doped Graphene Oxide Quantum Dots for Diffusive Memristor based Synaptic Device", International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, 2019
• 207. Moon Suk Choi, Andrey S. Sokolov, Yu-Rim Jeon, Hoonhee Han, and Changhwan Choi, "The Effects of Sulfurization on the MoS2 Growth", NT19: International Conference on the Science and Application of Nanotubes and Low-Dimensional Materials , Wurzburg, Germany, 2019
• 206. Hoonhee Han, Hyunju Seol, Jae Kyeong Jeong, and Changhwan Choi, "Improvement in Flash Memory Characteristics using Alternative CAAC-IGZO Channel Material", 17th Nano Korea, Kintex, Korea, 2019
• 205. Yu-Rim Jeon, Andrey S. Sokolov, and Changhwan Choi, "FDSOI MOSFET with High-K/Metal Gate as a Synaptic Device", 17th Nano Korea, Kintex, Korea, 2019
• 204. Hoonhee Han, and Changhwan Choi, "The Electrical Characteristics of InGaAs Tunnel FET", 17th Nano Korea, Kintex, Korea, 2019
• 203. Andrey S. Sokolov, Mumtaz Ali, and Changhwan Choi, "Threshold Switching Memristor with Ag/Nitrogen-Doped Graphene Oxide Quantum Dots/Pt Structure as an Electronic Synaptic Device", 17th Nano Korea, Kintex, Korea, 2019
• 202. Ma Yue, Hoonhee Han, Wang Xuan, and Changhwan Choi, "The Impacts of Mechanical Stress and Post Annealing Temperatures on the Ferroelectric Properties and Phase Transition of Al-doped HfO2 Thin Film", IEEE ISAF-ICE-EMF-IWPM-PFM Joint Conference, Lausanne, Switzerland, 2019
• 201. Yu-Rim Jeon, Donghwan Lim, Andrey S. Sokolov, and Changhwan Choi, "Silicon-Son-Insulator (SOI) MOSFET with HfAlOx/TiN Gate Stack as an Artificial Electronic Three-Terminal Synaptic Device", Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Busan, Korea, 2019
• 200. Ma Yue, Hoonhee Han, Wang Xuan, and Changhwan Choi, "Enhanced Ferroelectric Properties of Atomic Layer Deposited Aluminium-Doped Hafnium Oxide Thin Films by Engineering Thermal Annealing Process", Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Busan, Korea, 2019
• 199. Hoonhee Han, Soon Oh Jeong, and Changhwan Choi, "Flash Memory Operation Using C-Axis Aligned Crystalline IGZO (CAAC-IGZO) Thin Film as an Alternative Channel Materials", Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Busan, Korea, 2019
• 198. ¸¶¿­, ÇÑÈÆÈñ, ¿ÕÈÍ, ÃÖâȯ, "Impact of Rapid Thermal Annealing on the Ferroelectric Behaviors of HZO (Hf1-xZrxO2) Thin Film", 26ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Ⱦ¼º À£¸®Èú¸®ÆÄÅ©, 2019.02
• 197. ¾Èµå·¹, ÀüÀ¯¸², ±¼ ÇÏ»ê, ÃÖâȯ, "Threshold Switching and Synaptic Characteristics with Nitrogen doped Graphene Oxide Quantum Dots", 26ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Ⱦ¼º À£¸®Èú¸®ÆÄÅ©, 2019.02
• 196. ¿ÕÈÍ, ÇÑÈÆÈñ, ¸¶¿­, ÃÖâȯ, "A Study on the Interface Traps with Al2O3/IGZO-Based MOS Device Using Consecutive Capacitance Measurement", 26ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Ⱦ¼º À£¸®Èú¸®ÆÄÅ©, 2019.02
• 195. ÀÓµ¿È¯, ÇÑÈÆÈñ, °­¼öö, À̺´ÈÆ, ÃÖâȯ, "Drain Avalanche Hot Carrier (DAHC) for Channel Junction Analysis of Tunnel FETs", 26ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Ⱦ¼º À£¸®Èú¸®ÆÄÅ©, 2019.02
• 194. ÀÓµ¿È¯, ÇÑÈÆÈñ, ÃÖâȯ, "Measurement Temperature Dependence on the Electrical Characteristics of Si and InGaAs Tunnel FETs", 26ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Ⱦ¼º À£¸®Èú¸®ÆÄÅ©, 2019.02
• 193. ÀüÀ¯¸², ÀÓµ¿È¯, ¾Èµå·¹, ÃÖâȯ, "3D Integrated CBRAM and SOI-MOSFET for Neuromorphic Device System", 26ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Ⱦ¼º À£¸®Èú¸®ÆÄÅ©, 2019.02
• 192. ÇÑÈÆÈñ, ¼³ÇöÁÖ, Á¤Àç°æ, ÃÖâȯ, "Flash Memory Operation with C-Axis Aligned Cyrstalline IGZO (CAAC-IGZO) Thin Film Channel Material Prepared by Metal-Induced Crystallization", 26ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Ⱦ¼º À£¸®Èú¸®ÆÄÅ©, 2019.02
• 191. ÃÖâȯ, "3D Integration Process Technology - Monolithic 3D Integration", 2ȸ ¹ÝµµÃ¼ »êÇп¬ Workshop, COEX, 2019.10
• 190. ±¸º»Ã¶, ¾Èµå·¹, ÀüÀ¯¸², ÇÏÀÌ´õ ¾Æ¹Ù½º, ÃÖâȯ, "Àΰø ½Ã³À½º ¼ÒÀÚ ÀÀ¿ëÀ» À§ÇÑ À¯¹«±â CH3NH3PbI3 Æä·Îºê½ºÄ«ÀÌÆ® ¹Ú¸· ±â¹Ý ¿øÀÚ ½ºÀ§Ä¡", Çѱ¹¹ÝµµÃ¼µð½ºÇ÷¹ÀÌ ÇÐȸ Ãß°èÇмú´ëȸ, ÇѾç´ëÇб³ 2019.11
• 189. ÀüÀ¯¸², ÇÏÀÌ´õ ¾Æ¹Ù½º, ÃÖâȯ, "Ag/BN/Pt ±¸Á¶ÀÇ ¸Þ¸ð¸® ¼ÒÀÚ¿¡¼­ÀÇ ½ºÀ§Äª ·¹ÀÌ¾î µÎ²²¿¡ µû¸¥ Ag À̵¿¼º ¿¬±¸", Çѱ¹¹ÝµµÃ¼µð½ºÇ÷¹ÀÌ ÇÐȸ Ãß°èÇмú´ëȸ, ÇѾç´ëÇб³ 2019.11
• 188. ¾Èµå·¹, ÀüÀ¯¸², ±¼ ÇÏ»ê, ÃÖâȯ, "Electronic Synapse with TaOx/IGZO Hybrid Thin Films for Flexible Neuromorphic Device", Nano Convergence Conference (NCC), °­ÃÌ ¿¤¸®½Ã¾È ¸®Á¶Æ®,2019.01
• 187. ÀüÀ¯¸², ¾Èµå·¹, ±¸º»Ã¶, ±è¼ÒÇö, ÃÖâȯ, "The Bilayer Structured Diffusive Memristor as a Synaptic Device", Nano Convergence Conference (NCC), °­ÃÌ ¿¤¸®½Ã¾È ¸®Á¶Æ®,2019.01
• 186. ÇÑÈÆÈñ, ÃÖâȯ, "Monolithically Integrated CMOS Wafer Scheme with Ion Implantation and Low Temperature Process Steps", Nano Convergence Conference (NCC), °­ÃÌ ¿¤¸®½Ã¾È ¸®Á¶Æ®,2019.01

2018

• 185. Yu-Rim Jeon, Donghwan Lim, Yawar Abbas, Andrey S. Sokolov, Boncheol Ku, Sohyeon Kim, and Changhwan Choi,, "The Synaptic Plasticity Characteristics of FDSOI-MOSFET with HKMG", The 5th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), Jeju, Korea, 2018
• 184. Yawar Abbas, Gul Hassan, and Changhwan Choi, "Voltage Induced Complementary and Bipolar Switching in Low Temperature Solution Processed Rutile TiO2 Thin Film", The 5th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), Jeju, Korea, 2018
• 183. Andrey S. Sokolov, and Changhwan Choi, "Low-power Ag/N-GOQDs/Pt Diffusive Memristor for Synaptic Applications", The 5th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), Jeju, Korea, 2018
• 182. Boncheol Ku, Sohyeon Kim, Andrey S. Sokolov, Yu-Rim Jeon, Changhwan Choi, "Multilevel Resistive Switching Characteristics of ALD HfOx ReRAM by Plasma Surface Modification", International Union of Materials Research Societies - International Conference on Electronic Materials 2018 (IUMRS-ICEM 2018), Daejeon, Korea, 2018
• 181. Myeong Gyoon Chae, Jin Woo Park, Geun Yong Yeomg, and Changhwan Choi, "Effects of NF3/NH3 Remote Plasma Dry Cleaning on the Electrical Characteristics of MOS Device on the Highly Trenched Si Substrate", International Union of Materials Research Societies - International Conference on Electronic Materials 2018 (IUMRS-ICEM 2018), Daejeon, Korea, 2018
• 180. Yawar Abbas, Andrey S. Sokolov, Yu-Rim Jeon, Sohyeon Kim, , Boncheol Kuand Changhwan Choi, "Enabling the Tantalum Oxide based Memristor for Neuromorphic Applications", International Union of Materials Research Societies - International Conference on Electronic Materials 2018 (IUMRS-ICEM 2018), Daejeon, Korea, 2018
• 179. Yu-Rim Jeon, Yawar Abbas, and Changhwan Choi, "The synaptic Plasticity of Low-Power Diffusion Memristor with Ag/Ta2O5/HfO2/Pt Structure", International Union of Materials Research Societies - International Conference on Electronic Materials 2018 (IUMRS-ICEM 2018), Daejeon, Korea, 2018
• 178. Myeong Gyoon Chae, Donghwan Lim, Hoon Hee Han, Yu-Rim Jeon, Andrey S. Sokolov, and Changhwan Choi, "Effect of Mechanical Stress on Ferroelectric Properties of Fully-Atomic Layer Deposition Processed TiN/Doped HfO2/TiN Stacks", 18th ALD 2018, Incheon, Korea, 2018
• 177. Andrey S. Sokolov, Yawar Abbas, Yu-Rim Jeon, Boncheol Ku, Sohyeon Kim, and Changhwan Choi, "Highly Flexible Ti/TaOx/IGZO/Pt ReRAM Device For Perspective Synaptic Applications", 16th Nanokorea, Kintex, Korea, 2018
• 176. Donghwan Lim, Hoon Hee Han, Myeong Gyoon Chae, Wang Xuan, and Changhwan Choi, "Work-Function Modulation and Electrical Stress Immunity of Fully Depleted SOI (FDSOI) Tunnel Field Effect Transistor (TFET) with Plasma Enhanced Atomic Layer Deposited (PEALD) TiN Gate Electrode", 16th Nano Korea, Kintex, Korea, 2018
• 175. Yu-Rim Jeon, Yawar Abbas, and Changhwan Choi, "The Thickness Dependent Electro-Forming Behaviors of Ag/BN/Pt Memory Devices", 16th Nano Korea, Kintex, Korea, 2018
• 174. In Sub Han, Boncheol Ku, Myeong Gyoon Chae, Hoon Hee Han, and Changhwan Choi, "The Effects of Rapid Thermal Annealing on the Resistive Swtiching Characteristics of Atomic Layer Deposited ZrO2-based ReRAM Device", 16th Nano Korea, Kintex, Korea, 2018
• 173. Boncheol Ku, In Sub Han, Bon Kee Koo, Min Jae Ko, and Changhwan Choi, "Resistive Switching and Synaptic Characteristics of Organic-Inorganic CH3NH3PbI3 Perovskite Material-Based RRAM for Neuromorphic System", 16th Nano Korea, Kintex, Korea, 2018
• 172. Sohyeon Kim, Yawar Abbas, Andrey S. Sokolov, Yu-Rim Jeon, Boncheol Ku, and Changhwan Choi, "Optimizing Electrical Pulse Scheme for Linear Conductance Change of ALD HfOx ReRAM Synaptic Device", 16th Nano Korea, Kintex, Korea, 2018
• 171. ä¸í±Õ, ±è¼ÒÇö, ±¸º»Ã¶, ÃÖâȯ, "The Effects of Annealing on the Electrical Characteristics of In0.53Ga0.47As MOS Device", Çѱ¹Àç·áÇÐȸ Ãß°èÇмú´ëȸ, ¿©¼ö µð¿À¼Ç¸®Á¶Æ®, 2018.11
• 170. ÀÓµ¿È¯, ÇÑÈÆÈñ, ä¸í±Õ, ÃÖâȯ, "Stress Immunity to Vth Shift of IGZO TFT via Plasma Passivation", Çѱ¹Àç·áÇÐȸ Ãá°èÇмú´ëȸ, »ïö ½òºñÄ¡ È£ÅÚ, 2018.05
• 169. ÇÑÈÆÈñ, ÀÓµ¿È¯, ÃÖâȯ, "°ÔÀÌÆ® ¶ó½ºÆ® °øÁ¤À¸·Î Á¦ÀÛµÈ ¿ÏÀü °øÇÌÇü ½Ç¸®ÄÜ-¿Â-Àý¿¬Ã¼ MOSFET ¼ÒÀÚÀÇ ¹®ÅÎ Àü¾Ð Á¦¾î", Çѱ¹¹ÝµµÃ¼µð½ºÇ÷¹À̱â¼úÇÐȸ Ãá°èÇмú´ëȸ, ´ëÀü Çѱ¹±â°è¿¬±¸¿ø, 2018.04
• 168. ÀÓµ¿È¯, ÇÑÈÆÈñ, ÃÖâȯ, "Tunneling Field Effect Transistors with FIN-typed Channel Structure and Their Electrical Characteristics", 25ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø¸®Á¶Æ®, 2018.02 - Best Paper Award -
• 167. ÇÑÈÆÈñ, ÃÖâȯ, "Ion Cut-Based Thin Si Layer Transfer on the 8 Inch Full Device Wafer for the Monolithic 3D Integration Scheme", 25ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø¸®Á¶Æ®, 2018.02
• 166. ±¸º»Ã¶, ±è¼ÒÇö, Yawar Abbas, Andrey Sokolov Sergeevich, ÀüÀ¯¸², ÃÖâȯ, "Improved Synaptic Behaviors of Ar Plasma-Irradiated ALD HfO2 ReRAM", 25ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø¸®Á¶Æ®, 2018.02
• 165. Andrey Sokolov Sergeevich, ±è¼ÒÇö, ±¸º»Ã¶, Yawar Abbas, ÀüÀ¯¸², ÃÖâȯ, "Low-Power (~1.5 nJ/spike) Synaptic Events in Cold-Deposited Ti/a-TaOx/a-IGZO/Pt Heterostructures on the Flexible PET Substrate", 25ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø¸®Á¶Æ®, 2018.02
• 164. ÇϹü±æ, ÀÌÀçÈ£, ÀÓµ¿È¯, ÇÑÈÆÈñ, ä¸í±Õ, ÃÖâȯ, "The NH3 plasma Treatment within ALD HfO2 of IGZO Thin Film Transistors (TFTs) and Its Impact on the Electrical Characteristics", 25ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø¸®Á¶Æ®, 2018.02
• 163. ä¸í±Õ, ÀÌÀçÈ£, ÇϹü±æ, °í°æ¹ü, äÈñ¿±, ÃÖâȯ, "The Electrical Characterization of The Nano-Size Trench Structured MOS Device Assisted by CHF3-Plasma Dry Cleaning", 25ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø¸®Á¶Æ®, 2018.02
• 162. ÀüÀ¯¸², ÇÑÈÆÈñ, ÃÖâȯ, "Nano-Sized Thin Wafer Transfer under Low Temperature (<250oC) for the 3D Stacking Technology", 25ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø¸®Á¶Æ®, 2018.02
• 161. ±è¼ÒÇö, ±¸º»Ã¶, Yawar Abbas, Andrey Sokolov Sergeevich, ÀüÀ¯¸², ÃÖâȯ, "Engineering Synaptic Characteristics of ALD HfOx based ReRAM by insertin TiOx layer and controlling pulse scheme", 25ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø¸®Á¶Æ®, 2018.02
• 160. Andrey Sokolov Sergeevich, Yawar Abbas, ÀüÀ¯¸², ±è¼ÒÇö, ±¸º»Ã¶, ÃÖâȯ, "Synaptic Plasticity in Pt/ZnO/SiO2-x/Pt Heterostructure Devices for Neuromorphci Applications", Nano Convergence Conference (NCC), ¼­¿ï ¾çÀçaT¼¾ÅÍ,2018.01
• 159. ÀüÀ¯¸², Yawar Abbas, ÃÖâȯ, "Multilevel Resistive Switching Memory of Tantalum Oxide based RRAM Device", Nano Convergence Conference (NCC), ¼­¿ï ¾çÀçaT¼¾ÅÍ,2018.01

2017

• 158. Yawar Abbas, Andrey S. Sokolov, Yu-Rim Jeon, Boncheol Ku, Sohyeon Kim, and Changhwan Choi, "Electrcial Responses of TaOx-Based RRAM Device to Neuromorphic Characteristics", International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology - (IWDTF), Kyoto, Japan, 2017
• 157. Hoonhee Han, Donghwan Lim, Myeong Gyoon Chae, Jaeho Lee, Beomgil Ha, and Changhwan Choi, "Hydrogen Ion Implantation-Based Wafer Bonding with Low Blister Formation Temperature (<450¡É) for M3D Integration", International Microprocesses and Nanotechnology Conference (MNC), Jeju, Korea, 2017
• 156. Sohyeon Kim,Yawar Abbas, and Changhwan Choi, "Engineering Digital to Analog Resistive Switching of HfOx-based RRAM by Inserting TaOy for Synaptic Behavior", International Microprocesses and Nanotechnology Conference (MNC), Jeju, Korea, 2017
• 155. Boncheol Ku, Yawar Abbas, and Changhwan Choi, "The Effects of Plasma Irradiation on the Resistive Switchiing of HfOx-Based RRAM", International Microprocesses and Nanotechnology Conference (MNC), Jeju, Korea, 2017
• 154. Yawar Abbas, Asif Ali, Jongwan Jung, and Changhwan Choi, "Resistive Switching Dependence on the Stacking Sequence of IGZO and SnO2 Heterojunction Memory Devices", International Microprocesses and Nanotechnology Conference (MNC), Jeju, Korea, 2017
• 153. Donghwan Lim, Hoon Hee Han, and Changhwan Choi, "Vth modulation and BTI characteristics of FD-SOI Tunneling Field Effect Transistors (TFETs)", The European Materials Research Society (E-MRS) Fall Meeting, Warsaw, Poland, 2017
• 152. Soo Cheol Kang, Donghwan Lim, Sung Kwan Lim, Jinwoo Noh, Seung-Mo Kim, Sang Kyung Lee, Changhwan Choi and Byoung Hun Lee, "Effect of High Pressure Annealing on the Reliability of FDSOI Tunneling FET", International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan, 2017
• 151. Andrey S. Sokolov, Donghwan Lim, Hoon Hee han, Yu-Rim Jeon, Yawar Abbas, Seokki Son, and Changhwan Choi, "Low-power, Forming-free and Analog-type Resistive Switching in Pt/SiOx/ZnO/Pt Oxide Heterostructures as an Electronic Synapse", International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan, 2017
• 150. Young Jin Kim, Donghwan Lim, Hoon Hee Han, Yu-Rim Jeon, Jae Ho Lee, Myeong Gyoon Chae, and Changhwan Choi, "The Effect of O2 Plasma Etching Process to Remove Residue on the Trench Patterened Structure", International Union of Material Research Society-International Conference of Advanced Materials (IUMRS-ICAM), Kyoto, Japan, 2017
• 149. Jae Ho Lee, Beom Gil Ha, Donghwan Lim, Andrey Sergeevich Sokolov, Yu-Rim Jeon, Hoon Hee Han, Myeong Gyoon Chae and Changhwan Choi, "The Influence of NH3 Plasma Treatment on ALD HfO2-IGZO TFTs", 17th International Meeting on Information Display (IMID 2017), Busan, Korea, 2017
• 148. Young Jin Kim, Myeong Gyoon Chae, and Changhwan Choi, "The Effect of Titanium Tetrachloride-based Plasma Enhanced ALD TiN on the Treshold Voltage of Gate Last-Like Processed FD-SOI MOSFET with ALD HfO2 Gate Dielectric", 17th International Conference on Atomic Layer Deposition (ALD 2017), Denver, USA, 2017
• 147. Sokolov Andrey Sergeevich, Donghwan Lim, Hoon Hee Han, Seok Ki Son, Yu-Rim Jeon, Jae Ho Lee and Changhwan Choi, "Influence of Oxygen Profile in ALD HfO2-x Thin Films on Non-Volatile Resistive Switching Behavior with a Ti/HfOx/Pt Structure", Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Gyeongju, Korea, 2017
• 146. Hoon Hee Han, Donghwan Lim, Yu-Rim Jeon, Andrey Sokolov Sergeevich, Jae-Ho Lee, and Changhwan Choi, "Improved Interface State Density (Dit) Characteristics of ALD HKMG GaN MOS Device with Surface Passivation", International Conference on Materials for Advanced Technologies (ICMAT 2017), Suntec, Singapore, 2017
• 145. Hoon Hee Han, Donghwan Lim, Andrey Sokolov Sergeevich, Yu-Rim Jeon, Jae Ho Lee, Seok Ki Son, andChanghwan Choi, "Suppressed Charge Trapping Characteristics of (NH4)2Sx Passivated GaN MOS Device with Atomic Layer Deposited HfAlOx Gate Dielectric", Insulating Films on Semiconductors (INFOS), Potsdam, Germany, 2017
• 144. Donghwan Lim, Jae Ho Lee, and Changhwan Choi, "Improved Performance of Gate-Last FDSOI Tunnel Field-Effect-Transistors (TFETs) with Modulating Al2O3 Composition in Atomic Layer Deposited HfAlOx Gate Dielectrics", Insulating Films on Semiconductors (INFOS), Potsdam, Germany, 2017
• 143. Young Jin Kim, Donghwan Lim, Hoon Hee Han, Andrey Sokolov Sergeevich, Yu-Rim Jeon, Jae Ho Lee, Seok Ki Son, and Changhwan Choi, "The Effects of Process Temperature on the Work Function Modulation of ALD HfO2 MOS Device with Plasma Enhanced ALD TiN Metal Gate Using TDMAT Precursor Development", Insulating Films on Semiconductors (INFOS), Potsdam, Germany, 2017
• 142. Jae Ho Lee, Donghwan Lim, Andrey Sokolov Sergeevich, Hoon He Han, Seok Ki Son, Yu-Rim Jeon, and Changhwan Choi, "Improved Electrical Characteristics of Gate-Last FD-SOI TFETs with All ALD High-K/Metal Gate Stack Using D2 Passivation", Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULSI), Athens, Greece, 2017
• 141. ä¸í±Õ, ÃÖâȯ, "Analysis of Dry Cleaning Effect of Nano-trench Patterned Si Wafer by Electrical Characterization", Çѱ¹Àç·áÇÐȸ Ãß°èÇмú´ëȸ, °æÁÖ Çö´ëÈ£ÅÚ,2017.11
• 140. ÇÑÈÆÈñ, ÀÓµ¿È¯, ÀüÀ¯¸², ÀÌÀçÈ£, ÃÖâȯ, "Comparative Study on the Electrical Characteristics between Gate-First and Gate-Last Processed MOS Devices", Çѱ¹Àç·áÇÐȸ Ãá°èÇмú´ëȸ, ¸ñÆ÷ Çö´ëÈ£ÅÚ,2017.05
• 139. ÀüÀ¯¸², ±æ¿µÀÎ, ÀÓµ¿È¯, ÇÑÈÆÈñ, ÃÖâȯ, "Nano-Scaled Silver Metal Cross Array Fabrication Using Nano-Imprint Lithography on the PET Substrate", Çѱ¹Àç·áÇÐȸ Ãá°èÇмú´ëȸ, ¸ñÆ÷ Çö´ëÈ£ÅÚ,2017.05
• 138. °­¼öö, ³ëÁø¿ì, ÀÓµ¿È¯, ±è½Â¸ð, ÀÓ¼º°ü, ÃÖâȯ, À̺´ÈÆ, "H2 Annealing¿¡ ÀÇÇÑ Tunnel FET InvertorÀÇ Àü±âÀû Ư¼º º¯È­", 24ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), ´ë¸í ºñ¹ßµðÆÄÅ©, 2017.02
• 137. Andrey Sokolov Sergeevich, ¼Õ¼®±â, ÀÓµ¿È¯, ±è¿µÁø, ÇÑÈÆÈñ, ÀÌÀçÈ£, ÀüÀ¯¸², ÃÖâȯ, "Novel Forming-Free and Multilevel Resistive Switching Device with SiOx/ZnO Thin Film Oxide Heterostructures", 24ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), ´ë¸í ºñ¹ßµðÆÄÅ©, 2017.02
• 136. ÀÓµ¿È¯, ÀÌÀçÈ£, ä¸í±Õ, ÇÑÈÆÈñ, ÀüÀ¯¸², Andrey Sokolov, ÃÖâȯ, "Improved Characteristics and VTH Modulation of FD-SOI Tunnel Field Effect Transistor (TFET) using ALD HfAlOx and TiN Gate Stacfk", 24ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), ´ë¸í ºñ¹ßµðÆÄÅ©, 2017.02
• 135. ÇÑÈÆÈñ, ÀüÀ¯¸², ÀÓµ¿È¯, ÀÌÀçÈ£, ±è¼ÒÇö, ÃÖâȯ, "The Low Temperature and Ion Implantation-Based Large- Scale Wafer Bonding for the Monolithic 3D Integration Platform", 24ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), ´ë¸í ºñ¹ßµðÆÄÅ©, 2017.02
• 134. ÀÌÀçÈ£, ÀÓµ¿È¯, Andrey Sokolov Sergeevich, ±è¿µÁø, ÇÑÈÆÈñ, ¼Õ¼®±â, ÀüÀ¯¸², ÃÖâȯ, "The Effects of Deuterium Annealing Pressure on P-type Si TFET with ALD HfAlOx and HfO2 Gate Dielectrics", 24ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), ´ë¸í ºñ¹ßµðÆÄÅ©, 2017.02
• 133. ÀüÀ¯¸², ÇÑÈÆÈñ, ÃÖâȯ, "The Process of Wafer Bonding and De-Bonding for Monolithic 3D Technology", 24ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), ´ë¸í ºñ¹ßµðÆÄÅ©, 2017.02
• 132. ±è¿µÁø, ÀÓµ¿È¯, ä¸í±Õ, °­µ¿±Õ, ÀÌÀç»ó, Á¶È£Áø, Áø¼º°ï, ȲÀǼº, ÃÖâȯ, "VTH Modulation of HfO2-MOSFETs with ALD TiN Using TiCl4 and NH3", 24ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), ´ë¸í ºñ¹ßµðÆÄÅ©, 2017.02

2016

• 131. Moon Suk Choi, Donghwan Lim, Youngjin Kim, Hoonhee Han, Seokki Son, Jaeho Lee, Rino Choi, and Changhwan Choi, "Kesterite Cu2ZnSnS4 (CZTS) Thin Films Using Sn/Cu/ZnS Stack Layers and H2S Sulfurization", Pacific Rim Symposium on Surfaces, Coatings & Interfaces (PACSURF), Kohala, USA, 2016
• 130. Hyun-Yong Yu, Hyoungsub Kim, Han-Youl Ryu, and Changhwan Choi, "Low Temperature Unit Process Development for Low Power 3D IoT Device", International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), Invited Talk, Jeju, Korea, 2016
• 129. Rino Choi, Hyun-Yong Yu, Hyungsub Kim, Han-Youl Ryu, Hee-Kyung Bae, Kevin Kinam Choi, Yong-Won Cha and Changhwan Choi, "Bonding Based Channel Transfer and Low Temperature Process for Monolithic 3D Integration Platform Development", IEEE S3S (SOI-3D-Subthreshold Microelectronic Technology Unified) Conference, Burlingame, USA, 2016
• 128. Changhwan CHoi, "Impacts of Wet and Dry Cleaning Process on the Performance of MOS Devices", \The 6th Interntional Conference on Microelectronics and Plasma Technology (ICMAP 2016), Invited Talk, Gyeongju, Korea, 2016
• 127. Changhwan Choi, Young Jin Kim, Hoon Hee Han, Seokki Son, "MOS Device VFB Shift Using Oxygen Modulation within PVD and PEALD TiN Gate Electrode", The 6th Interntional Conference on Microelectronics and Plasma Technology (ICMAP 2016), Gyeongju, Korea, 2016
• 126. Jiyeon Hong, Donghwan Lim, Young-Joo Eo, and Changhwan Choi, "Chemical Bath Deposited ZnS Buffer Layers for Cu(In,Ga)Se2 Thin Film Solar Cell", 20th Interntional Vacuum Congress (IVC-20), Busan, Korea, 2016
• 125. Seun Chang Heo, Donghwan Lim, Young Jin Kim, Hoon Hee Han, Seok Ki, Son, Jae Ho Lee, Andrey Sergeevich, and Changhwan Choi, "The Schottky Contact Characteristics of Atomic Layer Deposited Ruthenium Silicide with Post Annealing", 20th Interntional Vacuum Congress (IVC-20), Busan, Korea, 2016
• 124. Donghwan Lim, Hoon Hee Han, Young Jin Kim, and Changhwan Choi, "Performance Improvement of the Gate-Last Si-based TFET with Atomic Layer Deposited HfAlOx Gate Dielectrics", Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Hakodate, Japan, 2016
• 123. Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Jae-Wong Choi, Soo-Yeun Han, Jung-Yeon Kim, Rion Choi, and Changhwan Choi, "Characterization of High Pressure Hydrogen Annealing Effect on Polysilicon Channel Field Effect Transistors using Isothermal Deep Level Trap Spectroscopy", IEEE International Conference on IC Design and Technology (ICICDT), Ho Chi Minh City, Vietnam, 2016
• 122. Changhwan Choi, "The Impacts of PEALD TiN Process on The Effective Work-Function in the HKMG Devices", Invited Talk, International Symposium on Fusion Technology (ISFT), Harbin, China, 2016
• 121. ÃÖâȯ, "Monolithic 3D Integration µ¿Çâ [Invited]", ¹ÝµµÃ¼µð½ºÇ÷¹ÀÌ ½ÉÆ÷Áö¿ò, COEX, ¼­¿ï, 2016.10
• 120. ÃÖ¹®¼®, ÀÓµ¿È¯, Andrey Sokolov Sergeevich, ¼Õ¼®±â, ÇÑÈÆÈñ, ±è¿µÁø, ÀÌÀçÈ£, ÃÖâȯ, "Characteristics of Molybdenum Disulfide (MoS2) Formed by Hydrogen Sulfide (H2S) Sulfurization", Çѱ¹Àç·áÇÐȸ 2016³â Ãá°èÇмú´ëȸ, ¿©¼ö µð¿À¼Ç¸®Á¶Æ®, 2016.05
• 119. Á¤¿ì¼®, ÀÓµ¿È¯, ±è¿µÁø, ÇÑÈÆÈñ, ¼Õ¼®±â, Andrey Sokolov Sergeevich, ÀÌÀçÈ£, ÃÖâȯ, "NH3 Pre-Plasma Treatment to Reduce Interface State Density of GaN MOS Device", Çѱ¹Àç·áÇÐȸ 2016³â Ãá°èÇмú´ëȸ, ¿©¼ö µð¿À¼Ç¸®Á¶Æ®, 2016.05
• 118. ÀÓµ¿È¯, ±è¿µÁø, ÇÑÈÆÈñ, ÀÌÀçÈ£, ¼Õ¼®±â, Andrey Sergeevich, ÃÖâȯ, "°øÁ¤ »ê¼Ò¿Í Àü±Ø µÎ²²¿¡ ÀÇÇÑ HfO2/TiN MOS ¼ÒÀÚÀÇ Àü±âÀû Ư¼º", Çѱ¹¹ÝµµÃ¼µð½ºÇ÷¹À̱â¼úÇÐȸ, ÀüÁÖ ÀüºÏ´ëÇб³, 2016. 04
• 117. ±è¿µÁø, ÀÓµ¿È¯, ÀÌÀçÈ£, ÇÑÈÆÈñ, ÃÖâȯ, "¿øÀÚÃþ ÁõÂø¹ýÀ¸·Î Çü¼±µÈ Ru Schottky Diode Ư¼º Æò°¡", Çѱ¹¹ÝµµÃ¼µð½ºÇ÷¹À̱â¼úÇÐȸ, ÀüÁÖ ÀüºÏ´ëÇб³, 2016. 04
• 116. ÇÑÈÆÈñ, ÀÌÅÂÀ±, À¯Çö¿ë, ÃÖ¸®³ë, ÃÖâȯ, "¼ö¼Ò ÀÌ¿Â ÁÖÀÔ ¿¡³ÊÁö ¹× ÈÄ¼Ó ¿­Ã³¸® Á¶°Ç¿¡ µû¸¥ Si Wafer ³»ºÎ Cleavage Çü¼º ¿µÇâ", ´ëÇѱݼÓÀç·áÇÐȸ 2016³â Ãá°èÇмú´ëȸ, °æÁÖ È­¹éÄÁº¥¼Ç¼¾ÅÍ, 2016.04
• 115. ÇÑÈÆÈñ, ÀÌÅÂÀ±, ÃÖâȯ, "HF ¿ë¾× ³óµµ¿Í Anodizing Á¦¾î¸¦ ÅëÇÑ ´Ù°ø¼º Si Layer Çü¼º", ´ëÇѱݼÓÀç·áÇÐȸ 2016³â Ãá°èÇмú´ëȸ, °æÁÖ È­¹éÄÁº¥¼Ç¼¾ÅÍ, 2016.04
• 114. ÇÑÈÆÈñ, ÀÓµ¿È¯, ±è¿µÁø, ÃÖâȯ, "Suppressed Charge Trapping Behaviors of ALD HfAlOx GaN MOS Devices with Sulfur Passivation", 23ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), ÇÏÀÌ¿ø¸®Á¶Æ®, 2016.02
• 113. ¼Õ¼®±â, Andrey Sokolov, ÃÖâȯ, "Nano-scale Cross Array Neuromorphic Devices with Al-doped HfAlOx Laminated Oxide Switching Layer and Its Synaptic Characterization", 23ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), ÇÏÀÌ¿ø¸®Á¶Æ®, 2016.02
• 112. Andrey Sokolov, ¼Õ¼®±â, ÃÖâȯ, "Comparsion of Switching Characteristics of ALD Al2O3, HfO2, HfAlOx-based ReRAM Devices under DC Voltage Sweep", 23ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), ÇÏÀÌ¿ø¸®Á¶Æ®, 2016.02
• 111. ±è¿µÁø, ÀÓµ¿È¯, ÇÑÈÆÈñ,ÃÖâȯ, "Process Temperature Dependence on the Effective Work Function in the MOS Device with PEALD TiN Using TDMAT Source", 23ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), ÇÏÀÌ¿ø¸®Á¶Æ®, 2016.02
• 110. ÀÓµ¿È¯, ÇÑÈÆÈñ, ±è¿µÁø, ÃÖâȯ, "Improved Electrical Characteristics of FD-SOI Tunneling FET (TFET) Processed with Direct and Remote Interfacial Layer Scavenging Approaches", 23ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), ÇÏÀÌ¿ø¸®Á¶Æ®, 2016.02

2015

• 109. Uk-Jin Jung, Seung-Mo Kim, Donghwan Lim, Kyoung Eun Chang. Yun Ji Kim, Soo Cheol Kang, Sung Kwan Lim, Changhwan Choi and Byong Hun Lee, "Mechanism of Subthreshold Swing Degradation in P-type Tunnel FETs", Semiconductor Interface Specialists Conference (SISC), Arlington, USA, 2015
• 108. Young Jin Kim, Hoon Hee Han, Donghan Lim, and Changhwan Choi, "Modulation of Flatband Voltage (VFB) and Equivalent Oxide Thickness (EOT) Controlled by Oxygen and Thickness in HfO2/TiN Gate Stack", TACT International Thin Film Conference, Tainan, Taiwan, 2015
• 107. Moonsuk Choi, Donghwan Lim, Andrey Sokolov Sergeevich, Seok Ki Son, Young Jin Kim, Hoon Hee Han, and Changhwan Choi, "The Post Annealing to Control the Number of Layers of 2D MoS2 and SnS2", International Union of Materials Research Socities-International Conference on Advanced Materials (IUMRS-ICAM), Jeju, Korea, 2015
• 106. Woo Suk Jung, Donghwan Lim, Youngjin Kim, Hoonhee Han, and Changhwan Choi, "Improved Electrical Properties of GaN MOS Capacitor with NH3 Plasma Treatment", International Union of Materials Research Socities-International Conference on Advanced Materials (IUMRS-ICAM), Jeju, Korea, 2015
• 105. Woo Suk Jung, Donghwan Lim, Gwangwe Yoo, Jin-Hong Park, and Changhwan Choi, "Low Gate Leakage Current and Interface State Density of ALD Al2O3 SiC MOS Device with NH3 Plasma Treatment", Internatioanl Forum on Functional Materials (IFFM), Jeju, Korea, 2015
• 104. Moon Suk Choi, Youngin Gil, Jaewoo Shim, Jin-Hong Park, and Changhwan Choi, "Kesterite Cu2ZnSnS4 (CZTS) Thin Film Formation Using Sequential Annealing Process Under N2 and H2S Atmosphere", Internatioanl Forum on Functional Materials (IFFM), Jeju, Korea, 2015
• 103. Chulwon Chung, Young Jin Kim, Hoon Hee Han, Donghwan Lim, Woo Suk Jung, Moon Suk Choi, Seok-Ki Son, Andrey Sokolov Sergeevich, Jin-Hong Park, and Changhwan Choi, "Synthesis of P-type ZnO Thin Film with As Doping and Post Annealing", Internatioanl Forum on Functional Materials (IFFM), Jeju, Korea, 2015
• 102. Seung Chan Heo, Donghwan Lim, Woo Suk Jung, Moon Suk Choi, Youngin Gil, and Changhwan Choi, "Remote Plasma Atomic Layer Deposited Al2O3 4H SiC MOS Capacitor with H2 Plasma Passivation and Post Metallization Annealing", Insulating Films on Semiconductors (INFOS), Udine, Italy, 2015
• 101. Donghwan Lim, Woo Suk Jung, Moon Suk Choi, Youngin Gil, and Changhwan Choi, "The Effects of (NH4)Sx Treatment on n-GaN MOS Device with Nano-Laminated ALD HfAlOx and Ru Gate Stack", Insulating Films on Semiconductors (INFOS), Udine, Italy, 2015
• 100. Donghwan Lim, Woo Suk Jung, Young Jin Kim and Changhwan Choi, "Electrical Characteristics of ALD La2O3 Capping Layers Using Different Lanthanum Precursors in MOS Devices with ALD HfO2, HfSiOx, and HfSiON Gate Dielectrics", Insulating Films on Semiconductors (INFOS), Udine, Italy, 2015
• 99. Seung-Hwan Kim, Jeong-Kyu Kim, Gwang-Sik Kim, Changhwan Choi, and Hyun-Yong Yu, "Efficacy of Ge Passivation with Metal-Interlayer-Semiconductor Structure on III-V FET Source/Drain Contact Resistance Reduction", Material Research Society (MRS) Spring Meeting & Exhibit, San Francisco, USA, 2015
• 98. ±è¿µÁø, ÇÑÈÆÈñ, ÀÓµ¿È¯, ¼Õ¼®±â, Andrey Sergeevich, ÃÖâȯ, "The Effects of Etch Chemicals on the Electrical Properties of Metal-Oxide-Semiconductor (MOS) Device with Plasma Enhanced Atomic Layer Deposited (PEALD) TiN Metal Electrode", Çѱ¹Ç¥¸é°øÇÐȸ Ãß°èÇмú´ëȸ, °ïÁö¾Ï¸®Á¶Æ®, 2015.11
• 97. ±æ¿µÀÎ, ÃÖâȯ, "Nano Imprint·Î Çü¼ºµÈ Synaptic ¼ÒÀÚ ¹× Spike Time Dependant Plasticity (STDP) Ư¼º Æò°¡", 22nd Çѱ¹¹ÝµµÃ¼ Çмú´ëȸ, ¼Ûµµ ÄÁº¥½Ã¾Æ, 2015.02 - Best Poster Award -
• 96. ÀÓµ¿È¯, Á¤¿ì¼®, ÃÖâȯ, "A Facile Interface Passivation to Reduce Interface State (Nit) in Tunneling Field Effect Transistor (TFET) with ALD HfO2 and TiN Gate Stack", 22nd Çѱ¹¹ÝµµÃ¼ Çмú´ëȸ, ¼Ûµµ ÄÁº¥½Ã¾Æ, 2015.02

2014

• 95. Donghwan Lim, Woo Suk Jung, Sung Kwan Lim, Young Hun Kim, Uk Jin Jung, Byoung Hun Lee and Changhwan Choi, "The Effects of High Pressure Annealing on the Tunneling Field Effect Transistor (TFET)", International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), Jeju, Korea, 2014 - Silver Award -
• 94. Changhwan Choi, "P-type Kesterite Compound Semiconductor Material Prepared By Sputtering and Electro Spray Deposition For Solar Cell Applications [Invited Talk]", China Semiconductor Technology International Conference (CSTIC), Shanghai, China, 2014
• 93. Á¤Ã¶¿ø, ÃÖ¹®¼®, ÃÖâȯ, "The Effects of Butyl Carbitol on Cu2ZnSnS4 Thin Film Prepared by Electro Spray Deposition", ´ëÇѱݼÓÀç·áÇÐȸ 2014³â Ãß°èÇмú´ëȸ, °­¿ø·£µå ÄÁº¥¼Ç¼¾ÅÍ, 2014.10
• 92. ¼Õ¼®±â, À¯¼±¹®, ÃÖ¹®¼®, ±èµµÇü, ÃÖâȯ, "Improved Integration of High-k Dielectric on MoS2 by Using Metal Oxide Seed Layer", Çѱ¹Àç·áÇÐȸ 2014³â Ãá°èÇмú´ëȸ, â¿ø, 2014.05
• 91. ÀÓµ¿È¯, ÃÖ¹®¼®, ±èµµÇü, ±æ¿µÀÎ, Á¤¿ì¼®, Çã½ÂÂù, ÃÖâȯ, "The Effects of Post Annealing on the Schottky Behaviors of Atomic Layer Deposited Ruthenium on the Si Substrate", 21th Çѱ¹¹ÝµµÃ¼ Çмú´ëȸ, ÇѾç´ëÇб³, 2014.02
• 90. ÀÓµ¿È¯, Á¤¿ì¼®, ÃÖâȯ, "Ammonium Polysulfide Passivation for Interface between GaN and Atomic-Layer-Deposited HfAlOx", 21th Çѱ¹¹ÝµµÃ¼ Çмú´ëȸ, ÇѾç´ëÇб³, 2014.02
• 89. ÀÓµ¿È¯, Á¤¿ì¼®, ÃÖ¹®¼®, ±èµµÇü, ±æ¿µÀÎ, Á¤Ã¶¿ø, ÃÖâȯ, "Electrical Properties of ALD La2O3-Capped High-K/Metal Gate Device", 21th Çѱ¹¹ÝµµÃ¼ Çмú´ëȸ, ÇѾç´ëÇб³, 2014.02
• 88. ±æ¿µÀÎ, ±èµµÇü, À¯µ¿ÁØ, ÃÖ¹®¼®, ÀÓµ¿È¯, Á¤Ã¶¿ø, ÃÖâȯ, "Nano-Imprinted Metal Electrode by Solution-Based Ag Nano Particles with Methanol Capillary Force Effect", 21th Çѱ¹¹ÝµµÃ¼ Çмú´ëȸ, ÇѾç´ëÇб³, 2014.02
• 87. ±èµµÇü, ±æ¿µÀÎ, ÃÖâȯ, "Fabrication of Nano-Size Cross Array Patterns by Nano Imprint Lithography", 21th Çѱ¹¹ÝµµÃ¼ Çмú´ëȸ, ÇѾç´ëÇб³, 2014.02
• 86. ±èµµÇü, ±æ¿µÀÎ, ÃÖ¹®¼®, ÀÓµ¿È¯, Á¤¿ì¼®, ¼Õ¼®±â, Á¤Ã¶¿ø, ÃÖâȯ, "ÀûÃþÇü ¼ÒÀÚ ±¸Á¶¸¦ À§ÇÑ ³ª³ë ÀÓÇÁ¸°Æ® ±â¹Ý ±Ý¼Ó ³ª³ë¼± ÀûÃþ °øÁ¤ ±â¼ú", Á¦ 3ȸ ³ª³ë ÀÓÇÁ¸°Æ® ¸ôµù ÇÁ¸°Æ® Çмú´ëȸ, ¿¬¼¼´ëÇб³, 2014.02
• 85. ±æ¿µÀÎ, ±èµµÇü, ÃÖâȯ, "Facile Nano Imprint Lithography Fabrication for Metal Layer Stacked Array (< 800 nm) Using Ag Nano Particle Solution on the Flexible Substrate", Á¦ 3ȸ ³ª³ë ÀÓÇÁ¸°Æ® ¸ôµù ÇÁ¸°Æ® Çмú´ëȸ, ¿¬¼¼´ëÇб³, 2014.02

2013

• 84. Jiyeon Hong, Young-Joo Eo, SeJin Ahn, Ara Cho, Jihye Gwak, Keeshik Shin, Kyunghoon Yoon, Seung Kyu Ahn, Sang Hyun Park, Jun Sik Cho, Ju Hyung Park, Jin Su Yu, Jae Ho Yun, and Changhwan Choi, "Fabrication and Characterization of Chemically Deposited ZnS(O;OH) with Various Zn Salts", GPVC 2013 & DSC-OPV8 (Global Photovoltaic Conference 2013 & Aseanian Conference on Dye-sensitized & Organic Solar Cell, Busan, Korea, 2013
• 83. Donghwan Lim, Dongjun Yoo, Moon-Suk Choi, Dohyung Kim, Youngin Gil, Seung Chan Heo, and Changhwan Choi, "Plasma Passivation of Interface between Silicon Carbide and Dielectric", TACT International Thin Film Conference, Taipei, Taiwan, 2013
• 82. Donghwan Lim, Dongjun Yoo, Moon-Suk Choi, Dohyung Kim, Yongin Gil, Chulwon Chung, and Changhwan Choi, "Process Temperature Dependence on the Flat-Band Voltages between Gate-First and Gate-Last Processed Metal Oxide Semiconductor Devices with TiN Metal Gate", Nano Korea Symposium, Seoul, Korea, 2013
• 81. Changhwan Choi, Seung Chan Heo and Seok-Hee Lee, "Effects of Composition and Thickness of TiN Metal Gate on the Equivalent Oxide Thickness and Flat-Band Voltage in Metal Oxide Semiconductor Devices", Insulating Films on Semiconductors (INFOS), Cracow, Poland, 2013
• 80. Changhwan Choi, "Structural and Optical Properties of Atomic Layer Deposited ZnS Thin Films", China Semiconductor Technology International Conference (CSTIC), Shanghai, China, 2013
• 79. Changhwan Choi, "Work-Function Modulation and Further EOT scaling of High-K/Metal Gate Device", Semicon Korea 2013 (SEMI), Invited Talk, Coex, Seoul, 2013.01
• 78. ÃÖâȯ, "High-K Gate Dielectric/Metal Gate (HKMG) Technology ÀÌÇØ ¹× DRAM Peripheral Transistor °³¹ß Àü·« [ÃÊû°­¿¬]", Hynix Technology Roadmap for Semiconductor (HTRS), SK-Hynix, 2013, 11
• 77. Á¤Ã¶¿ø, À¯µ¿ÁØ, ÃÖ¹®¼®, ÀÓµ¿È¯, ±èµµÇü, ±æ¿µÀÎ, Á¤¿ì¼®, È«Áö¿¬, ÃÖâȯ,, "Impact of butyl carbitol on the Cu2ZnSnS4 (CZTS) thin film attained by electrostatic spray deposition", ´ëÇѱݼÓÀç·áÇÐȸ 2013³â Ãß°èÇмú´ëȸ, ±¤ÁÖ ÄÁº¥¼Ç¼¾ÅÍ, 2013.10
• 76. À¯µ¿ÁØ, ÃÖ¹®¼®, ÀÓµ¿È¯, ±èµµÇü, ±æ¿µÀÎ, Á¤¿ì¼®, È«Áö¿¬, Á¤Ã¶¿ø, ÃÖâȯ,, "The effects of substrate temperatures on the Cu2ZnSnS4 (CZTS) thin film prepared by sputtering single quaternary target", ´ëÇѱݼÓÀç·áÇÐȸ 2013³â Ãß°èÇмú´ëȸ, ±¤ÁÖ ÄÁº¥¼Ç¼¾ÅÍ, 2013.10
• 75. ÀÓµ¿È¯, À¯µ¿ÁØ, ÃÖ¹®¼®, ±èµµÇü, ±æ¿µÀÎ, Á¤Ã¶¿ø, Çã½ÂÂù, ÃÖâȯ,, "Comparative Study Between Sputtered Ru and ALD Ru for Schottky Contact Diode", Çѱ¹Àç·áÇÐȸ 2013³â Ãá°èÇмú´ëȸ ¹× Á¦ 24ȸ ½Å¼ÒÀç ½ÉÆ÷Áö¾ö, ¿©¼ö, 2013.05
• 74. ±èµµÇü, ±æ¿µÀÎ, À¯µ¿ÁØ, ÃÖ¹®¼®, ÀÓµ¿È¯, Á¤Ã¶¿ø, ÃÖâȯ,, "Direct Imprinting Lithography Combined Reverse Transfer Method Using Silver Metal Ink for Residues-free Layer", Çѱ¹Àç·áÇÐȸ 2013³â Ãá°èÇмú´ëȸ ¹× Á¦ 24ȸ ½Å¼ÒÀç ½ÉÆ÷Áö¾ö, ¿©¼ö, 2013.05
• 73. ÀÓµ¿È¯, À¯µ¿ÁØ, ÃÖ¹®¼®, ±èµµÇü, Á¤Ã¶¿ø, ±æ¿µÀÎ, È«Áö¿¬, ÃÖâȯ,, "Enhanced Thermal Stability by Doping Cobalt and Rhenium Elements into TiN Metal Gate in MOS Device", ´ëÇѱݼÓÀç·áÇÐȸ 2013³â Ãá°èÇмú´ëȸ, Á¦ÁÖ ÄÁº¥¼Ç¼¾ÅÍ, 2013.04
• 72. ÃÖ¹®¼®, À¯µ¿ÁØ, Á¤Ã¶¿ø, Çã½ÂÂù, ±èµµÇü, ÃÖâȯ, "Áø°ø¹ýÀ» ÀÌ¿ëÇÏ¿© ÁõÂøÇÑ Cu2ZnSnS4 (CZTS) ½ºÅà ¹Ú¸·ÀÇ Cu¾ç¿¡ µû¸¥ Ư¼º ¿¬±¸", 20th Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, ¼º¿ì¸®Á¶Æ®, 2013.02

2012

• 71. Dongjun Yoo, Moon-Suk Choi, Chulwon Chung, Seung Chan Heo, Dohyung Kim, and Changhwan Choi, "CZTS Compound Thin Film Absorber Layer Deposited by RF-Magnetron Co-Sputtering using Binary Targets", Global Photovoltaic Conference 2012 (GPVC) & Korea-EU International Symposium on Photovoltaics, Busan, Korea, 2012
• 70. Moon-Suk Choi, Dongjun Yoo, Chulwon Chung, Seung Chan Heo, Dohyung Kim, and Changhwan Choi, "Cu2ZnSnS4 Thin Film Formation using Multiple Cu, ZnS, and Sn Stacked Layers", Global Photovoltaic Conference 2012 (GPVC) & Korea-EU International Symposium on Photovoltaics, Busan, Korea, 2012
• 69. Moon Suk Choi, Dongjun Yoo, Chulwon Chung, Dohyung Kim, and Changhwan Choi, "Al-doped ZnO (AZO) Thin Film Using Room Temperature RF Magnetron Sputtering for N-type Window Layer of Solar Cell", International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), Jeju, Korea, 2012
• 68. Dongjun Yoo, Seung Chan Heo, Moon Suk Choi, Dohyung Kim, Chulwon Chung, and Changhwan Choi, "Structural and Optical Properties of RF-Sputtered ZnS Thin Films as an Alternative Buffer Layer for CIGS Solar Cell", International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), Jeju, Korea, 2012
• 67. Jeonghyun Kim, Sangkyu Lee, Yun Jung Lee, Changhwan Choi, Won Il Park, and Ungyu Paik, "Inorganic Semiconductor Patterning by Electrohydrodynamic Jet Printing for Transparent Electronic Devices", The Characterization and Control of Interfaces for High Quality Advanced Materials (ICCCI), Kurashiki, Japan, 2012
• 66. Chulwon Chung, Dongjun Yoo, Moon Suk Choi, Inyou Park, Dongwook Shin, Changhwan Choi, and Ungyu Paik, "Facile Synthesis of Low-Cost and Highly Efficient Cu2ZnSnS4 (CZTS) Thin Films for Photovoltaic Applications", The Characterization and Control of Interfaces for High Quality Advanced Materials (ICCCI), Kurashiki, Japan, 2012
• 65. Jeonghyun Kim, Sangkyu Lee, Junghyun Choi, Yun Jung Lee, Changhwan Choi, Won Il Park, and Ungyu Paik, "Optical and electrical properties of semiconductor thin films obtained by high-resolution printing", International Union of Materials Research Society-International Conference in Asia (IUMRS-ICA), Busan, Korea, 2012
• 64. Dongjoon Rhee, Moon Suk Choi, Dong Jun Yoo, Seung Chan Heo, and Changhwan Choi, "Properties of Cu2ZnSnS4 (CZTS) Thin Films Prepared by Sol-Gel Method Using Two Types of Solution", International Union of Materials Research Society-International Conference in Asia (IUMRS-ICA), Busan, Korea, 2012
• 63. Dong Jun Yoo, Moon Suk Choi, Dongjoon Rhee, Seung Chan Heo, and Changhwan Choi, "Properties of Zinc Sulfide (ZnS) Thin Films Deposited by RF-magnetron Sputtering with Post Annealing Process", International Union of Materials Research Society-International Conference in Asia (IUMRS-ICA), Busan, Korea, 2012
• 62. Dongjun Yoo, Moon-Suk Choi, Chulwon Chung, Seung Chan Heo, Dohyung Kim, and Changhwan Choi, "Characteristics of RF-Sputtered ZnS on the Flexible Polyethylene Terephthalate (PET) Substrate", Nano Korea Symposium, Seoul, Korea, 2012
• 61. Seung Chan Heo, Dongjun Yoo, Moon-Suk Choi, Dohyung Kim, Chulwon Chung, and Changhwan Choi, "Modulation of Flatband Voltage with Varying Nitrogen Composition and Thickness of TiN Metal Gate in Metal Oxide Semiconductor Devices with Atomic Layer Deposited HfO2 Gate Dielectric", Nano Korea Symposium, Seoul, Korea, 2012
• 60. Seung Chan Heo, Dongjun Yoo, Moon-Suk Choi, Dohyung Kim, Chulwon Chung, and Changhwan Choi, "Electrical and Chemical Analysis of Atomic Layer Deposited Al2O3 and 6H-SiC System Treated by Different NH3 Plasma Exposure Times", The Fourth International Conference on Microelectronics and Plasma Technology (ICMAP), Jeju, Korea, 2012
• 59. Dongjun Yoo, Moon-Suk Choi, Seung Chan Heo, Dohyung Kim, Chulwon Chung, and Changhwan Choi, "RF-Magnetron Sputtered Chalcopyrite Cu2ZnSnS4 Thin Film Using Single Quaternary Sputtering Target Prepared by Sintering Process", The Fourth International Conference on Microelectronics and Plasma Technology (ICMAP), Jeju, Korea, 2012
• 58. Seung Chan Heo, Dong Jun Yoo, and Changhwan Choi, "Interface Improvement of ALD Al2O3 Gate Dielectric/6H-SiC Substrate by Hydrogenation Passivation Technique", 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI), Busan, Korea, 2012
• 57. Changhwan Choi, "Dependence of Metal Gate Thickness and Composition on VFB Modulation in MOS Devices", Invited Talk, China Semiconductor Technology International Conference (CSTIC), Shanghai, China, 2012
• 56. ÃÖ¹®¼®, À¯µ¿ÁØ, Á¤Ã¶¿ø, Çã½ÂÂù, ±èµµÇü, ÃÖâȯ, "The Effects of Sequential N2 and S Annealing on the Properties of Cu2ZnSnS4 Thin Film Absorber Layer", ´ëÇѱݼÓÀç·áÇÐȸ Ãß°èÇмú´ëȸ, â¿ø ÄÁº¥¼Ç¼¾ÅÍ, 2012.10
• 55. À¯µ¿ÁØ, ±èÁø¿ì, ÃÖ¹®¼®, Á¤Ã¶¿ø, ±è¿µµµ, ÃÖâȯ, "Structural, Optical and Electrical Properties of Kesteriste Cu2ZnSnS4 Thin Film", ´ëÇÑ±Ý¼Ó Àç·áÇÐȸ Ãß°èÇмú´ëȸ, â¿ø ÄÁº¥¼Ç¼¾ÅÍ, 2012.10
• 54. ÃÖâȯ, "ÀüÀÚ¼ÒÀÚ¿¡¼­ÀÇ ±Ý¼ÓÀü±ØÀÇ ¿µÇâ [ÀþÀº°úÇÐÀÚ ÃÊû°­¿¬]", ´ëÇѱݼÓÀç·áÇÐȸ Ãá°èÇмú´ëȸ, ¼º¿ì¸®Á¶Æ®, 2012,04
• 53. Changhwan Choi, "Gate-Last Process Integration Issues with High-k Gate Dielectric and Metal Gate (HKMG) Technology [Invited Talk]", 19th Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °í·Á´ëÇб³, 2012.02
• 52. Dongjun Yoo, Seung Chan Heo and Changhwan Choi, "Impacts of Ar/N2 Flow rate of sputtered TiN Metal Gate on Electrical Properties in Gate-First Processed MOS Devices", 19th Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °í·Á´ëÇб³, 2012.02
• 51. Seung Chan Heo, Dongjun Yoo, Tae Yong Park, Hyeongtag Jeon, Tae Yong Jang, Rino Choi and Changhwan Choi, "Effects of Interface Plasma Passivation of Pt/Al2O3/6H-SiC MOS Devices", 19th Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, °í·Á´ëÇб³, 2012.02

2011

• 50. Changhwan Choi and Jinho Ahn, "The Role of Oxygen in High-k and Metal Gate (HKMG) Device for Work Function Tuning", China-Japan-Korea International Symposium on Fusion Technology, Dalian, China, 2011
• 49. Changhwan Choi, Jinho Ahn and Rino Choi, "Thermal Stability of Single and Alloy Noble Metals as for PMOS Gate Electrode", International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, 2011
• 48. Changhwan Choi and Rino Choi, "The electrical and structural properties of HfO2/SrTiO3 stacked gate dielectric with TiN metal gate electrode", The Third International Conference on Microelectronics and Plasma Technology (ICMAP), Dalian, China, 2011
• 47. Seung Chan Heo and Changhwan Choi, "The Effects of Plasma Atomic Layer Deposited TiN on MOS device: deposition temperature, capping and post annealing", The Third International Conference on Microelectronics and Plasma Technology (ICMAP), Dalian, China, 2011
• 46. Yoon-Uk Heo, Tae-Young Jang, Donghyup Kim, Jae Kyeong Jeong, Changhwan Choi and Rino Choi, "Evaluation of Performance and Reliability of p-type Metal-Oxide-Semiconductor Field Effect Transistors Effects with various Al Incorporations", The Third International Conference on Microelectronics and Plasma Technology (ICMAP), Dalian, China, 2011
• 45. Sunwoo Lee, Junghyuck Park, Changhwan Choi, Kil-Bock Lee, Joong Hwee Cho, and Jinho Ahn, "Electrical Performance of Organic Field Effect Transistor (OFET) with High-k Gate Oxides under Consecutive Electrical Bias Stress", The Third International Conference on Microelectronics and Plasma Technology (ICMAP), Dalian, China, 2011
• 44. Sanghyun Woo, Hyungchul Kim, Jaesang Lee, Hyerin Lee, Youngchan Kim, Changhwan Choi and Hyeongtag Jeon, "Improved Al2O3 Dielectric Properties using Remote Plasma Atomic Layer Deposition with Negative-Biased Pulse-Mode Direct Current (DC) Power", The Third International Conference on Microelectronics and Plasma Technology (ICMAP), Dalian, China, 2011
• 43. T.-Y. Jang, D.-H. Kim, J. Kim, J. S. Chang, J. K. Jeong, Y.-U. Heo,Y. K. Kim, C. Choi, H. Park and R. Choi, "Bias dependence of PBTI degradation mechanism in metal-oxide semiconductor field effect transistors with La-incorporated hafnium-based dielectric", 17th Insulating Films on Semiconductor (INFOS), Grenoble, France, 2011
• 42. Seung Chan Heo, Dongjun Yoo and Changhwan Choi, "An Etching Study of Sputtered TiN Gate Electrode", ´ëÇÑ±Ý¼Ó Àç·áÇÐȸ 2011³â Ãß°èÇмú´ëȸ, ´ëÀü ÄÁº¥¼Ç¼¾ÅÍ, 2011.10
• 41. ÃÖâȯ, "IBM fab campÀÇ ÇöȲ ¹× ±â¼ú °³¹ß Àü·«", Á¦1ȸ ÀÓº£µðµå½Ã½ºÅÛÀ» À§ÇÑ ¹Ì·¡ ¹ÝµµÃ¼»ê¾÷ ¿öÅ©¼¥, ÀÎõ´ëÇб³ ¼ÛµµÄ·ÆÛ½º, 2011.04
• 40. ÃÖâȯ, "Gate Stack ±â¼ú ÇöȲ ¹× °³¹ß Àü·«", Á¦3Â÷ ¹Ì·¡ ¹ÝµµÃ¼¼ÒÀÚ °³¹ß Àü·« ¿öÅ©¼¥, ±¤ÁÖ°úÇбâ¼ú¿ø ¿À·æ°ü, 2011.03
• 39. ÃÖâȯ, "CMOS Integration Options with HKMG Technology for DRAM Applications [ÃÊû°­¿¬]", ÇÏÀ̴нº¹ÝµµÃ¼, ÀÌõ, 2011,02
• 38. ÃÖâȯ, "HKMG DeviceÀÇ Process ¹× Materials¿¡ µû¸¥ Workfunction Á¦¾î MechanismÀÇ Çؼ® ¹× Memory/Logic ProcessÀÇ Àû¿ë [ÃÊû°­¿¬]", »ï¼ºÀüÀÚ, »ï¼ºÀüÀÚ ¹ÝµµÃ¼¿¬±¸¼Ò, 2011.02
• 37. ÃÖâȯ, "Diffusionless Annealing for Flatband Voltage Tuning of PMOS Devices with High-K/Metal Gate Stack", 18th Çѱ¹¹ÝµµÃ¼Çмú´ëȸ, Á¦ÁÖ ÇغñÄ¡È£ÅÚ, 2011.02
• 36. ÃÖâȯ, "High-k Gate Dielectric and Metal Gate (HKMG) Technology for DRAM Technology [ÃÊû°­¿¬]", ÇÏÀ̴нº¹ÝµµÃ¼, ÀÌõ, 2011,01

2010

• 35. Changhwan Choi* and Jack C. Lee, "Scaling equivalent oxide thickness with flat band voltage (VFB) modulation using in-situ Ti and Hf interposed in a metal/high-k gate stack", Journal of Applied Physics, 108, p.064107-064109, 2010
• 34. Marwan H. Khater, Zhen Zhang, Jin Cai, Christian Lavoie, Christopher D'Emic, Qingyun Yang, Bin Yang, Michael Guillorn, David Klaus, John A. Ott, Yu Zhu, Ying Zhang, Changhwan Choi, Martin M. Frank, Kam-Leung Lee, Vijay Narayanan, Dae-Gyu Park, Qiqing Ouyang, and Wilfried Haensch, "High-k/Metal-Gate Fully Depleted SOI CMOS with Single-Silicide Schottky Source/Drain with sub-30nm Gate length", IEEE Electron Device Letters, Vol. 31, No. 4, p.275-277, 2010
• 33. Takashi Ando, Martin M. Frank,Kisik Choi, Changhwan Choi, John Bruley, Marinus J. Hopstaken, Richard Haight, Matthew Copel, Hiroaki Arimura, Heiji Watanabe and Vijay Narayanan, "Ultimate EOT Scaling (< 5Å) Using Hf-Based High-Gate Dielectrics and Impact on Carrier Mobility", The Electrochemical Society (ECS) Transaction, 28 (1), p.115-123, 2010
• 32. Changhwan Choi, "Characterization of n-channel metal-oxide-semiconductor field-effect-transistor (nMOSFET) with sputtered SrTiO3-doped HfO2 gate dielectric", Çѱ¹Àç·áÇÐȸ Ãß°èÇмú¹ßÇ¥ ¹× Á¦ 19ȸ ½Å¼ÒÀç½ÉÆ÷Áö¾ö, Invited Talk, ¹«ÁÖ¸®Á¶Æ®, 2010.11

2009 ~

• 31. Takashi Ando, Allesandro Callegari, Changhwan Choi, Marinus Hopstaken, John Bruley, Michael Gordon, Heiji Watanabe, and Vijay Narayanan, "Effective Work Function Control of TaC/High-k Gate Stack by Post Metal Nitridation", 40th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, session 9, 9.2, 2009
• 30. Changhwan Choi, Takashi Ando, Eduard Cartier, Martin M. Frank, Ryosuke Iijima and Vijay Narayanan, "Quasi-Damascene metal gate/high-k CMOS using oxygenation through gate electrodes", Insulating Films on Semiconductor (INFOS), Cambridge, UK, 2009 1^st Ranked Paper
• 29. E. Cartier, M. Steen, B. P. Linder, T. Ando, R. Iijima, M. Frank, J. S. Newbury, Y. H. Kim, F. R. McFeely, M. Copel, R. Haight, C. Choi, A. Callegari, V. K. Paruchuri and V. Narayanan, "pFET Vt Control with HfO2/TiN/Poly-Si Gate Stack Using a Lateral Oxygenation Process", Symposium on VLSI Technology (VLSI), Kyoto, Japan, Session 3A-5, 2009
• 28. K. Choi, H. Jagannathan, C. Choi, L. Edge, T. Ando, M. M. Frank, P.J amison, M. Wang, E. Cartier, S. Zafar, J. Bruley, A. Kerber, B. Linder, A. Callegari, Q. Yang, S. Brown, J. Stathis, J. Iacoponi, V. Paruchuri and V. Narayanan, "Extremely Scaled Gate-First High-k/Metal Gate Stack with EOT of 0.55 nm Using Novel Interfacial Layer Scavenging Techniques for 22nm Technology Node and Beyond", Symposium on VLSI Technology (VLSI), Kyoto, Japan, Session 7-2, 2009
• 27. Martin M. Frank, Changhwan Choi, Takashi Ando, Kisik Choi, John Bruley, Marco Hopstaken, Matthew Copel, SangBum Kim and Vijay Narayanan, "Scaling the Metal Gate / High-k Stack - From High-k to Higher-k?", Materials Research Society (MRS) Meeting, San Francisco, CA, USA, C4.1, 2009
• 26. Praneet Adusumilli, Alessandro Callegari, Changhwan Choi, Marinus Hopstaken, Michael A Gribelyuk and Vijay Narayanan, "Scaling with TiC Metal Gates", Materials Research Society (MRS) Meeting, San Francisco, CA, USA, C5.2, 2009
• 25. T. Ando, M. M. Frank, K. Choi, C. Choi, J. Bruley, M. Hopstaken, M. Copel, E. Cartier, A. Kerber, A. Callegari, D. Lacey, S. Brown, Q. Yang, and V. Narayanan, "Understanding Mobility Mechanisms in Extremely Scaled HfO2 (EOT 0.42 nm) Using Remote Interfacial Layer Scavenging Technique and Vt-tuning Dipoles with Gate-First Process", IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, USA, session 17-1, 2009
• 24. Changhwan Choi, Takashi Ando, Zia Karim, Sasangan Ramanathan and Vijay Narayanan, "Modulating Work Function for pFET with AVD Ru-based & TaN-based Gate Electrodes", 39th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, Session 8-4, 2008
• 23. Changhwan Choi, Eduard Cartier, Yun Y. Wang,Vijay Narayanan and Mukesh Khare, "Dual layer SrTiO3/HfO2 gate dielectric for aggressively scaled band-edge nMOS devices", Insulating Films on Semiconductor (INFOS), Athens-Glyfada, Greece, Session 17.1 page 295, 2007
• 22. Feng Zhu, C.Y Kang, S.J Rhee, C.H Choi, S.A Krishnan, M. Zhang, H.S Kim, T. Lee, I. Ok, G. Thareja, and J.C Lee, "Improving carrier mobility and reliability characteristics of high-k NMOSFET by using stacked Y2O3/HfO2 gate dielectric", 44th IEEE International Reliability Physics Symposium (IRPS), San Jose, CA, USA, pages 659-660, 2006
• 21. Tackhwi Lee, Se Jong Rhee, Chang Yong Kang, Feng Zhu, Manhong Zhang, Hyoung-sub Kim, Changhwan Choi, Injo Ok, Sergei Koveshnikov, Hokyung Park, and Jack C Lee, "Improved MOSFET characteristics by Incorporating Laminated Dysprosium (Dy2O3) Dielectric into HfO2 Gate Stack", 64th Device Research Conference (DRC), Piscataway, NJ, USA, pages 69-70, 2006
• 20. Sergei Koveshnikov, Wilman Tsai, Manhong Zhang, Changhwan Choi, and Jack Lee, "Metal Gated Self-aligned Gate-forward nMOSFET with 0.8 nm EOT Fabricated by In-situ Ar/O2 Plasma Oxidation of PVD Hf", 207th Electrochemcial Society (ECS) Meeting, Quebec, Canada, pages 638, 2005
• 19. Changhwan Choi, Chang Yong Kang, Se Jong Rhee, M.S Akbar, S.A Krishna, Manhong Zhang, Hyungseob Kim, Tackhwi Lee, Feng Zhu, Injo Ok, S. Koveshnikov, and Jack C.Lee, "Fabrication of TaN-gated ultra-thin MOSFETs (EOT <1.0 nm) with HfO2 using a novel oxygen scavenging process for sub 65 nm application", Symposium on VLSI Technology (VLSI), Kyoto, Japan, pages 226-227, 2005
• 18. Se Jong Rhee, Hyoung-Sub Kim, Chang Yong Kang, Chang Hwan Choi, Manhong Zhang, Feng Zhu, Tackhwi Lee, Injo Ok, M.S Akbar, S.A Krishnan, and Jack C. Lee, "Optimization and reliability characteristics of TiO2/HfO2/ multi-metal dielectric MOSFETs", Symposium on VLSI Technology (VLSI), Kyoto, Japan, pages 169-169, 2005
• 17. Se Jong Rhee, Hyoung-Sub Kim, Chang Yong Kang, Chang Hwan Choi, Akbar, M.S., Zhang, M., Lee, T., Ok, I., Zhu, F., Krishnan, S.A., and Lee, J.C, "Structural optimization and electrical characteristics of ultra-thin gadolinium (Gd2/O3) incorporated HfO2 n-MOSFETs", 63rd Device Research Conference (DRC), Santa Barbara, CA, USA, pages 219-220, 2005
• 16. Changhwan Choi, Kang, C.S., Kang, C.Y., Choi, R., Cho, H.J., Kim, Y.H., Rhee, S.J., Akbar, M., and Lee, J.C., "The effects of nitrogen and silicon profile on high-k MOSFET performance and Bias Temperature Instability", Symposium on VLSI Technology (VLSI), Honolulu, HI, USA, pages 214-215, 2004
• 15. Kang, C.Y., Rhee, S.J., Choi, C.H., Akbar, M.S., Kim, H.S., Zhang, M., Lee, T., Ok, I., Zhu, F.,and Lee, J.C., "Effects of optimized nitrogen tailoring in high-k dielectrics on impurity penetration and stress induced device degradation", 43rd IEEE International Reliability Physics Symposium (IRPS), San Jose, CA, USA, pages 628-629, 2004
• 14. Jack C. Lee, S. Rhee, C. Kang, C. Choi, S. Krishnan, I. Ok, M. Akbar, H. Kim, F. Zhu, M. Zhang, and T. Lee, "Invited paper - Process Effects and Characterization of Hf-Based Dielectrics", 207th Electrochemcial Society (ECS) Meeting, Quebec, Canada, May/2004
• 13. Se Jong Rhee, Chang Seok Kang, Chang Hwan Choi, Chang Yong Kang, Siddarth Krishnan, Manhong Zhang, Akbar, M.S., and Lee, J.C., "Improved electrical and material characteristics of hafnium titanate multi-metal oxide n-MOSFETs with ultra-thin EOT (~8Å) gate dielectric application", IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pages 837-840, 2004
• 12. Se Jong Rhee, Chang Yong Kang, Young Hee Kim, Chang Seok Kang, Hag-Ju Cho, Rino Choi, Chang Hwan Choi, M.S Akbar, and Jack C. Lee, "Threshold voltage instability of ultra-thin HfO2 NMOSFETs: characteristics of polarity dependences", 62nd Device Research Conference (DRC), Notre Dame, IN, USA, pages 101-102, 2004
• 11. Se Jong Rhee, Young Hee Kim, Chang Yong Kang, Chang Seok Kang, Hag-Ju Cho, Rino Choi, Chang Hwan Choi, Akbar, M.S. and Jack C. Lee, "Dynamic positive bias temperature instability characteristics of ultra-thin HfO2 NMOSFET", 42nd IEEE International Reliability Physics Symposium (IRPS), Phoenix, AZ, USA, pages 269-272, 2004
• 10. Kang, C.Y., Cho, H.-J., Kang, C.S., Choi, R., Kim, Y.H., Rhee, S.J., Choi, C.H., Akbar, S.M., and Lee, J.C., "Effects of thin SiN interface layer on transient I-V characteristics and stress induced degradation of high-k dielectrics", 42nd IEEE International Reliability Physics Symposium (IRPS), Phoenix, AZ, USA , pages 587-588, 2004
• 9. Changhwan Choi, C.Y. Kang, S. J. Rhee, M.S. Akbar, S.A. Krishnan, M. Zhang and Jack C. Lee, "A Suppression of Interfacial Oxide Formation by Oxygen-Scavenging Technique to Reduce EOT to <0.7nm of¡°Undoped¡±HfO2/Si Gate Stacks", IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, LNOP2, 2004
• 8. Se Jong Rhee, Chang Seok Kang, Chang Yong Kang, Chang Hwan Choi, Manhong Zhang, Siddarth Krishnan, Mohammad S. Akbar and Jack C. Lee, "Charge Compensation Effect in Hafnium Titanate Multi-metal Oxide n-MOSFETs", IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA , pages 50-51, 2004
• 7. Cho, H.-J., Kang, C.Y., Kang, C.S., Choi, R., Kim, Y.H., Akbar, M.S., Choi, C.H., Rhee, S.J., and Lee, J.C, "The effects of nitrogen in HfO2 for improved MOSFET performance", International Semiconductor Device Research Symposium (ISDRS), Washington, D.C, USA, pages 68-69, 2003
• 6. Jack C. Lee, S. Rhee, C. Kang, C. Choi, S. Krishnan, I. Ok, M. Akbar, H. Kim, F. Zhu, M. Zhang, and T. Lee, "Invited paper- High-k Dielectrics and MOSFET Characteristics", IEEE International Electron Devices Meeting (IEDM), Washington, D.C, USA ,pages 95, 2003
• 5. H.-J. Cho, C.Y. Kang, C.S. Kang, Y.H. Kim, R. Choi, A. Shahriar, C.H. Choi, S.J. Rhee and J. C. Lee, "Effects of NH3 Annealing on High-k HfSiON/HfO2 Gate Stack Dielectrics", 204th Electrochemcial Society (ECS) Meeting, Orlando, FL, USA , No. 558, 2003
• 4. Chang Seok. Kang, H. Cho, Y. Kim, R. Choi, A. Sharhriar, C. Kang, C. Choi, S.Rhee, and J. Lee, "Characterization of Resistivity and Work Function of Sputtered-TaN Film for Gate Electrode Applications", 204th Electrochemcial Society (ECS) Meeting, Orlando, FL, USA , No. 552, 2003
• 3. Lee, S.J., Lee, C.H., Choi, C.H., and Kwong, D.L., "Time-dependent dielectric breakdown in poly-Si CVD HfO2 gate stack", 40th IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA, pages 409-414, 2002
• 2. Choi, C.H., Rhee, S.J., Jeon, T.S., Lu, N., Sim, J.H., Clark, R., Niwa, M., and Kwong, D.L., "Thermally stable CVD HfOxNy advanced gate dielectrics with poly-Si gate electrode", IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pages 857-860, 2002
• 1. Kim, Y.H., Lee, C.H., Jeon, T.S., Bai, W.P., Choi, C.H., Lee, S.J., Xinjian, L., Clarks, R., and Kwong, D.L., "High quality CVD TaN gate electrode for sub-100 nm MOS devices", IEEE International Electron Devices Meeting (IEDM), Washington, D.C, USA ,pages 30.5.1-3, 2001