ÇѾç´ëÇб³ ³ª³ëÀüÀÚ¼ÒÀÚ ¹× Àç·á¿¬±¸½Ç
Nano Electronic Devices & Materials Laboratory
º» ¿¬±¸½Ç¿¡¼´Â Â÷¼¼´ë ·ÎÁ÷ ¼ÒÀÚ, ¸Þ¸ð¸® ¼ÒÀÚ, ´º·Î¸ðÇÈ ¼ÒÀÚ ¹× ½Ã½ºÅÛ, 3Â÷¿ø ÁýÀû ¼ÒÀÚ ºÐ¾ß¿¡¼ ´Ù¾çÇÑ ÀüÀÚ Àç·á, ¹ÝµµÃ¼ °øÁ¤ ¹× ºÐ¼®À» È°¿ëÇÏ¿© ¿¬±¸¸¦ ¼öÇàÇÏ°í ÀÖ½À´Ï´Ù. Àç·áÀÇ ¹°¸®/ÈÇÐÀû Ư¼ºÀ» ÀÌÇØÇÏ°í À̸¦ ¹ÙÅÁÀ¸·Î ¹ÝµµÃ¼ ¼ÒÀÚ¸¦ Á¦ÀÛÇÏ°í Àü±â/±¤ÇÐ/ÈÇÐ/¹°¸®ÀûÀΠƯ¼ºÀ» ºÐ¼®/Çؼ®ÇÕ´Ï´Ù.
Our research activities consist of material, process, device and characterization for various advanced semiconductor devices in logic, memory, neuromorphic and monolithic 3D integration.
Our research activities consist of material, process, device and characterization for various advanced semiconductor devices in logic, memory, neuromorphic and monolithic 3D integration.
Recent News more
-
2024 ENGE ÇÐȸ Âü¼®2024-12-01
-
2024 Çѱ¹Àç·áÇÐȸ Ãß°èÇмú´ëȸ Âü¼®2024-11-18
Gallery more
-
24³â 8¿ù Á¹¾÷»ý °¨»çÆÐ ¼ö¿©2024-09-29
-
NEDML ´ÜÇÕ È¸½Ä2024-09-10
Journal more
-
Chanseul Lee, Sunbum Kim, Gyulee Kim, and Changhwan Choi, "Heterogeneous Monolithic 3D Integration for Hybrid Vertical CMOS Inverter using N-type IGTO TFT on P-type Si FET", Materials Science in Semiconductor Processing, Vol. 185, pp. 108871, 2024
Conference more
-
Kyungsoo Park, Chulwon Chung, Boncheol Ku, Seunghyeon Yun, Junhyeok Park and Changhwan Choi, "Improved Memory Window and Endurance of FeFET using Laminated Thin Films and Fluorine Plasma Passivation for Analog Synaptic Characteristics", International Conference on Solid State Devices and Materials (SSDM), Arcrea HIMEJI Hyogo, Japan, 2024.09