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Nano Electronic Devices & Materials Laboratory
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Our research activities consist of material, process, device and characterization for various advanced semiconductor devices in logic, memory, neuromorphic and monolithic 3D integration.
Our research activities consist of material, process, device and characterization for various advanced semiconductor devices in logic, memory, neuromorphic and monolithic 3D integration.
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2026 KCS ÇÐȸ Âü¼® ¹× ¹ßÇ¥2026-02-11 -
2026 NCC ÇÐȸ Âü¼® (±èµ¿¿í, ¼°¹é, ÀåÇØ¼ö, Á¤Àç¿ø, ÃÖÁöÈÆ)2026-02-10
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Farewell 2025, NEDML: End of Chapter, Adios!2026-01-13 -
2026 º´¿À³â »õÇØ2026-01-05
Journal more
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Chanseul Lee, Sunbum Kim, Gyulee Kim, Minhyuk Kim, Yongjoo Park, and Changhwan Choi*, "Material and Electrical Characteristics of Thin Film Transistor using Cationic Composition Controlled Atomic Layer Deposited In-Ga-Sn-O (IGTO) Thin Film", accepted, ACS Applied Electronic Materials,, 2026
Conference more
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Dohyun Lee, Yunseo Lim, Jisu Park, Gyumin Hwang, Sangmyun Lim, Seongho Lee, JinYeong Lee, Hoon Pyo and Changhwan Choi*, "Impact of Crystallization on Trap Levels and Charge Storage Characteristics of High-k HfO©ü Charge Trap Layers for 3D NAND Flash Memory Device", 33ȸ Çѱ¹¹ÝµµÃ¼Çмú´ëȸ (KCS), Á¤¼± ÇÏÀÌ¿ø ±×·£µå È£ÅÚ, 2026.01

