
ÇѾç´ëÇб³ ³ª³ëÀüÀÚ¼ÒÀÚ ¹× Àç·á¿¬±¸½Ç
Nano Electronic Devices & Materials Laboratory
º» ¿¬±¸½Ç¿¡¼´Â Â÷¼¼´ë ·ÎÁ÷ ¼ÒÀÚ, ¸Þ¸ð¸® ¼ÒÀÚ, ´º·Î¸ðÇÈ ¼ÒÀÚ ¹× ½Ã½ºÅÛ, 3Â÷¿ø ÁýÀû ¼ÒÀÚ ºÐ¾ß¿¡¼ ´Ù¾çÇÑ ÀüÀÚ Àç·á, ¹ÝµµÃ¼ °øÁ¤ ¹× ºÐ¼®À» Ȱ¿ëÇÏ¿© ¿¬±¸¸¦ ¼öÇàÇϰí ÀÖ½À´Ï´Ù. Àç·áÀÇ ¹°¸®/ÈÇÐÀû Ư¼ºÀ» ÀÌÇØÇϰí À̸¦ ¹ÙÅÁÀ¸·Î ¹ÝµµÃ¼ ¼ÒÀÚ¸¦ Á¦ÀÛÇϰí Àü±â/±¤ÇÐ/ÈÇÐ/¹°¸®ÀûÀΠƯ¼ºÀ» ºÐ¼®/ÇØ¼®ÇÕ´Ï´Ù.
Our research activities consist of material, process, device and characterization for various advanced semiconductor devices in logic, memory, neuromorphic and monolithic 3D integration.
Our research activities consist of material, process, device and characterization for various advanced semiconductor devices in logic, memory, neuromorphic and monolithic 3D integration.
Recent News more
-
AMAT ¾ÈÁøÈ£ ¹Ú»ç´Ô ÃÊû °¿¬ "New Innovations Enabling Fine Pitch D2W Hybrid Bonding"2025-07-20
-
ALD/ALE 2025 ÇÐȸ Âü¼®(ÀÓÇöÁø, ÇÑ»ó±¹, ³ª¿µ¼)2025-06-28
Gallery more
-
Á¹¾÷»ý ¼¼¹Ì³ª(¾ÈÈ¿Áø)2025-08-21
-
2025 ´ëÇÑÀüÀÚ°øÇÐȸ Âü¼® ¹× NEDML MT2025-08-21
Journal more
-
Chulwon Chung, Kyungsoo Park, Seunghyeon Yun, Junhyeok Park, Hyeon Cheol Jeong, Changhwan Choi*, "The Effects of Inserted layers (HfO2, ZrO2, Y2O3, La2O3) on the Ferroelectric and Synaptic Properties of Zr-doped HfO2 Sandwich Structure", Applied Surface Science, Vol 710, p.163918-63928, 2025
Conference more
-
Wonjae Choi, Sangkuk Han, Wonyoung, Jang, Haesoo Jang, Jaewon Chung, Kyungwook Park, and Changhwan Choi, "Flat-Band Voltage Tuning through Al Layer Position Engineering in (Al2O3)X(HfO2)1-X Gate Structure Logic Device", 2025 International Conference on Solid State Devices and Materials (SSDM), Pacifico Yokohama, Yokohama, Japan, 2025.09