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Nano Electronic Devices & Materials Laboratory
º» ¿¬±¸½Ç¿¡¼­´Â Â÷¼¼´ë ·ÎÁ÷ ¼ÒÀÚ, ¸Þ¸ð¸® ¼ÒÀÚ, ´º·Î¸ðÇÈ ¼ÒÀÚ ¹× ½Ã½ºÅÛ, 3Â÷¿ø ÁýÀû ¼ÒÀÚ ºÐ¾ß¿¡¼­ ´Ù¾çÇÑ ÀüÀÚ Àç·á, ¹ÝµµÃ¼ °øÁ¤ ¹× ºÐ¼®À» Ȱ¿ëÇÏ¿© ¿¬±¸¸¦ ¼öÇàÇϰí ÀÖ½À´Ï´Ù. Àç·áÀÇ ¹°¸®/È­ÇÐÀû Ư¼ºÀ» ÀÌÇØÇϰí À̸¦ ¹ÙÅÁÀ¸·Î ¹ÝµµÃ¼ ¼ÒÀÚ¸¦ Á¦ÀÛÇϰí Àü±â/±¤ÇÐ/È­ÇÐ/¹°¸®ÀûÀΠƯ¼ºÀ» ºÐ¼®/ÇØ¼®ÇÕ´Ï´Ù.

Our research activities consist of material, process, device and characterization for various advanced semiconductor devices in logic, memory, neuromorphic and monolithic 3D integration.

Recent News more

  • AMAT ¾ÈÁøÈ£ ¹Ú»ç´Ô ÃÊû °­¿¬ "New Innovations Enabling Fine Pitch D2W Hybrid Bonding"
    2025-07-20
  • ALD/ALE 2025 ÇÐȸ Âü¼®(ÀÓÇöÁø, ÇÑ»ó±¹, ³ª¿µ¼­)
    2025-06-28

Gallery more

  • Á¹¾÷»ý ¼¼¹Ì³ª(¾ÈÈ¿Áø)
    2025-08-21
  • 2025 ´ëÇÑÀüÀÚ°øÇÐȸ Âü¼® ¹× NEDML MT
    2025-08-21

Journal more

  • Chulwon Chung, Kyungsoo Park, Seunghyeon Yun, Junhyeok Park, Hyeon Cheol Jeong, Changhwan Choi*, "The Effects of Inserted layers (HfO2, ZrO2, Y2O3, La2O3) on the Ferroelectric and Synaptic Properties of Zr-doped HfO2 Sandwich Structure", Applied Surface Science, Vol 710, p.163918-63928, 2025

Conference more

  • Wonjae Choi, Sangkuk Han, Wonyoung, Jang, Haesoo Jang, Jaewon Chung, Kyungwook Park, and Changhwan Choi, "Flat-Band Voltage Tuning through Al Layer Position Engineering in (Al2O3)X(HfO2)1-X Gate Structure Logic Device", 2025 International Conference on Solid State Devices and Materials (SSDM), Pacifico Yokohama, Yokohama, Japan, 2025.09